Search results
Jump to navigation
Jump to search
Page title matches
- The selectivity of plasma etching—the ability to etch specific materials while leaving others intact—is achieved through carefu3 KB (455 words) - 15:45, 25 March 2024
- The selectivity of plasma etching—the ability to etch specific materials while leaving others intact—is achieved through carefu The Bosch process involves a cyclic series of etch and passivation steps, repeated iteratively to achieve the desired depth an8 KB (1,150 words) - 09:01, 26 March 2024
Page text matches
- [[Category:Etch]] | Instrument_Type = Etch1 KB (201 words) - 14:08, 3 January 2024
- === [[How plasma etch works|Plasma Etch]] === === Vapor/Wet Etch ===6 KB (765 words) - 16:59, 25 April 2024
- The selectivity of plasma etching—the ability to etch specific materials while leaving others intact—is achieved through carefu3 KB (455 words) - 15:45, 25 March 2024
- The selectivity of plasma etching—the ability to etch specific materials while leaving others intact—is achieved through carefu The Bosch process involves a cyclic series of etch and passivation steps, repeated iteratively to achieve the desired depth an8 KB (1,150 words) - 09:01, 26 March 2024
- [[Category:Etch]] | Instrument_Type = Etch789 bytes (104 words) - 14:09, 3 January 2024
- [[Category:Etch]] | Instrument_Type = Etch3 KB (468 words) - 14:54, 5 March 2024
- [[Category:Etch]] | Instrument_Type = Etch1 KB (199 words) - 14:08, 3 January 2024
- * [https://upenn.app.box.com/file/1004242723681 Deposition and Etch Characterization of LPCVD SiNx thin films]1 KB (208 words) - 15:23, 3 July 2023
- | Anatech SCE-108 Barrel Asher || DE-02 || Dry Etch || [[Kyle Keenan | Kyle Keenan]] | SPTS Si DRIE || DE-03 || Dry Etch || [[Sam Azadi | Sam Azadi]]6 KB (758 words) - 13:58, 18 April 2024
- |AreasResponsibility = Etch <br> Deposition2 KB (261 words) - 10:00, 10 May 2024
- ...17tkubb36ylzt SPR 220-3] || + || Ethyl lactate, anisole, n-amyl acetate || Etch, 2um-5um || [https://wiki.nano.upenn.edu/wiki/index.php?title=SUSS_MicroTec ...tkubb36ylzt SPR 220-4.5] || + || Ethyl lactate, anisole, n-amyl acetate || Etch || [https://wiki.nano.upenn.edu/wiki/index.php?title=SUSS_MicroTec_MA6_Gen317 KB (2,690 words) - 15:46, 24 May 2024
- | Instrument_Type = Etch ...Given a constant gas pressure, the higher the surface area, the lower the etch rate. Nitrogen gas can be introduced in the chamber to increase selectivity1 KB (212 words) - 11:03, 22 May 2024
- [[Category:Etch]] | Instrument_Type = Etch3 KB (395 words) - 13:28, 11 June 2024
- |AreasResponsibility = Etch, <br> Deposition1 KB (161 words) - 14:53, 29 April 2022
- * [https://repository.upenn.edu/scn_protocols/74/ Deposition and Etch Characterization of LPCVD SiNx]2 KB (324 words) - 10:11, 29 January 2024