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• Ever wondered how plasma etch works?
  The selectivity of plasma etching—the ability to etch specific materials while leaving others intact—is achieved through carefu
  3 KB (455 words) - 15:45, 25 March 2024
• How plasma etch works
  The selectivity of plasma etching—the ability to etch specific materials while leaving others intact—is achieved through carefu The Bosch process involves a cyclic series of etch and passivation steps, repeated iteratively to achieve the desired depth an
  8 KB (1,150 words) - 09:01, 26 March 2024

Page text matches

• Anatech SCE-108 Barrel Asher
  [[Category:Etch]] | Instrument_Type = Etch
  1 KB (201 words) - 14:08, 3 January 2024
• Equipment
  ''[[How plasma etch works|Plasma Etching Overview]]'' === Plasma Etch ===
  6 KB (840 words) - 15:04, 31 January 2025
• Ever wondered how plasma etch works?
  The selectivity of plasma etching—the ability to etch specific materials while leaving others intact—is achieved through carefu
  3 KB (455 words) - 15:45, 25 March 2024
• How plasma etch works
  The selectivity of plasma etching—the ability to etch specific materials while leaving others intact—is achieved through carefu The Bosch process involves a cyclic series of etch and passivation steps, repeated iteratively to achieve the desired depth an
  8 KB (1,150 words) - 09:01, 26 March 2024
• IntlVac NanoQuest 1 IBE
  [[Category:Etch]] | Instrument_Type = Etch
  2 KB (244 words) - 14:14, 31 March 2025
• Jupiter II RIE Plasma Etcher
  [[Category:Etch]] | Instrument_Type = Etch
  793 bytes (104 words) - 14:15, 31 March 2025
• Oxford 80 Plus RIE
  [[Category:Etch]] | Instrument_Type = Etch
  3 KB (471 words) - 14:15, 31 March 2025
• Oxford Cobra ICP Etcher
  [[Category:Etch]] | Instrument_Type = Etch
  1 KB (199 words) - 14:15, 31 March 2025
• PECVD SiNx via CHF3 + O2
  This process is performed to measure the etch rate of PECVD SiNx using an Oxford 80 plus RIE tool. Lithography equipment === Etch ===
  2 KB (255 words) - 15:47, 16 September 2024
• PECVD SiO2 via CHF3 + O2
  ...amine the etch properties of the Oxford 80 Plus RIE system and to find the etch rate of SiO2 and S1818 MicroChem positive resist. === Etch ===
  1 KB (198 words) - 14:59, 16 September 2024
• Process Resources
  * [[How plasma etch works]] * [https://upenn.app.box.com/file/1004242723681 Deposition and Etch Characterization of LPCVD SiNx thin films]
  2 KB (249 words) - 16:09, 14 January 2025
• QNF Equipment Owner Matrix
  | Intlvac IBE Ion Mill || DE-01 || Dry Etch || [[David_Barth | David Barth]] | Anatech SCE-108 Barrel Asher || DE-02 || Dry Etch || [[Ana Cohen | Ana Cohen]]
  7 KB (864 words) - 14:10, 31 March 2025
• QNF Staff
  |AreasResponsibility = Etch <br> Deposition
  2 KB (261 words) - 10:00, 10 May 2024
• Resists at QNF
  ...6ylzt SPR 220-3] || positive,<br> 2.5-5um || i-line, g-line & broadband || Etch, Plating || [[SUSS MicroTec MA6 Gen3 Mask Aligner | MA-01]], <br> [[ CEE Ap ...lzt SPR 220-4.5] || positive,<br> 3.5-8um || i-line, g-line & broadband || Etch, Plating || [[SUSS MicroTec MA6 Gen3 Mask Aligner | MA-01]], <br> [[ CEE Ap
  15 KB (2,353 words) - 12:20, 3 March 2025
• SPTS/Xactix XeF2 Isotropic Etcher
  | Instrument_Type = Etch ...Given a constant gas pressure, the higher the surface area, the lower the etch rate. Nitrogen gas can be introduced in the chamber to increase selectivity
  1 KB (212 words) - 14:16, 31 March 2025
• SPTS Si DRIE
  [[Category:Etch]] | Instrument_Type = Etch
  3 KB (395 words) - 14:15, 31 March 2025
• Sam Azadi
  |AreasResponsibility = Etch, <br> Deposition
  1 KB (161 words) - 14:53, 29 April 2022
• Sandvik Furnace Stack
  * [https://repository.upenn.edu/scn_protocols/74/ Deposition and Etch Characterization of LPCVD SiNx]
  2 KB (324 words) - 14:12, 31 March 2025
• Tergeo-Plus Plasma Cleaner
  [[Category:Etch]] | Instrument_Type = Etch
  980 bytes (139 words) - 14:18, 31 March 2025

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