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• Ever wondered how plasma etch works?
  The selectivity of plasma etching—the ability to etch specific materials while leaving others intact—is achieved through carefu
  3 KB (455 words) - 14:45, 25 March 2024
• How plasma etch works
  The selectivity of plasma etching—the ability to etch specific materials while leaving others intact—is achieved through carefu The Bosch process involves a cyclic series of etch and passivation steps, repeated iteratively to achieve the desired depth an
  8 KB (1,150 words) - 08:01, 26 March 2024

Page text matches

• Anatech SCE-108 Barrel Asher
  [[Category:Etch]] | Instrument_Type = Etch
  1 KB (201 words) - 13:08, 3 January 2024
• Equipment
  ''[[How plasma etch works|Plasma Etching Overview]]'' === Plasma Etch ===
  6 KB (802 words) - 15:43, 4 November 2024
• Ever wondered how plasma etch works?
  The selectivity of plasma etching—the ability to etch specific materials while leaving others intact—is achieved through carefu
  3 KB (455 words) - 14:45, 25 March 2024
• How plasma etch works
  The selectivity of plasma etching—the ability to etch specific materials while leaving others intact—is achieved through carefu The Bosch process involves a cyclic series of etch and passivation steps, repeated iteratively to achieve the desired depth an
  8 KB (1,150 words) - 08:01, 26 March 2024
• IntlVac NanoQuest 1 IBE
  [[Category:Etch]] | Instrument_Type = Etch
  2 KB (244 words) - 13:11, 6 November 2024
• Jupiter II RIE Plasma Etcher
  [[Category:Etch]] | Instrument_Type = Etch
  789 bytes (104 words) - 13:09, 3 January 2024
• Oxford 80 Plus RIE
  [[Category:Etch]] | Instrument_Type = Etch
  3 KB (471 words) - 15:08, 16 October 2024
• Oxford Cobra ICP Etcher
  [[Category:Etch]] | Instrument_Type = Etch
  1 KB (199 words) - 13:08, 3 January 2024
• PECVD SiNx via CHF3 + O2
  This process is performed to measure the etch rate of PECVD SiNx using an Oxford 80 plus RIE tool. Lithography equipment === Etch ===
  2 KB (255 words) - 14:47, 16 September 2024
• PECVD SiO2 via CHF3 + O2
  ...amine the etch properties of the Oxford 80 Plus RIE system and to find the etch rate of SiO2 and S1818 MicroChem positive resist. === Etch ===
  1 KB (198 words) - 13:59, 16 September 2024
• Process Resources
  * [https://upenn.app.box.com/file/1004242723681 Deposition and Etch Characterization of LPCVD SiNx thin films]
  1 KB (216 words) - 14:48, 17 June 2024
• QNF Equipment Owner Matrix
  | Intlvac IBE Ion Mill || DE-01 || Dry Etch || [[Sam Azadi | Sam Azadi]] | Anatech SCE-108 Barrel Asher || DE-02 || Dry Etch || [[Ana Cohen | Ana Cohen]]
  7 KB (875 words) - 10:14, 13 August 2024
• QNF Staff
  |AreasResponsibility = Etch <br> Deposition
  2 KB (261 words) - 09:00, 10 May 2024
• Resists at QNF
  ...17tkubb36ylzt SPR 220-3] || + || Ethyl lactate, anisole, n-amyl acetate || Etch, 2um-5um || [[SUSS MicroTec MA6 Gen3 Mask Aligner | MA-01]], <br> [[ CEE Ap ...tkubb36ylzt SPR 220-4.5] || + || Ethyl lactate, anisole, n-amyl acetate || Etch || [[SUSS MicroTec MA6 Gen3 Mask Aligner | MA-01]], <br> [[ CEE Apogee Spin
  15 KB (2,250 words) - 16:53, 18 June 2024
• SPTS/Xactix XeF2 Isotropic Etcher
  | Instrument_Type = Etch ...Given a constant gas pressure, the higher the surface area, the lower the etch rate. Nitrogen gas can be introduced in the chamber to increase selectivity
  1 KB (212 words) - 10:03, 22 May 2024
• SPTS Si DRIE
  [[Category:Etch]] | Instrument_Type = Etch
  3 KB (395 words) - 12:28, 11 June 2024
• Sam Azadi
  |AreasResponsibility = Etch, <br> Deposition
  1 KB (161 words) - 13:53, 29 April 2022
• Sandvik Furnace Stack
  * [https://repository.upenn.edu/scn_protocols/74/ Deposition and Etch Characterization of LPCVD SiNx]
  2 KB (324 words) - 09:11, 29 January 2024