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• Ever wondered how plasma etch works?
  The selectivity of plasma etching—the ability to etch specific materials while leaving others intact—is achieved through carefu
  3 KB (455 words) - 15:45, 25 March 2024
• How plasma etch works
  The selectivity of plasma etching—the ability to etch specific materials while leaving others intact—is achieved through carefu The Bosch process involves a cyclic series of etch and passivation steps, repeated iteratively to achieve the desired depth an
  8 KB (1,150 words) - 09:01, 26 March 2024

Page text matches

• Anatech SCE-108 Barrel Asher
  [[Category:Etch]] | Instrument_Type = Etch
  1 KB (201 words) - 14:08, 3 January 2024
• Equipment
  === [[How plasma etch works|Plasma Etch]] === === Vapor/Wet Etch ===
  6 KB (765 words) - 16:59, 25 April 2024
• Ever wondered how plasma etch works?
  The selectivity of plasma etching—the ability to etch specific materials while leaving others intact—is achieved through carefu
  3 KB (455 words) - 15:45, 25 March 2024
• How plasma etch works
  The selectivity of plasma etching—the ability to etch specific materials while leaving others intact—is achieved through carefu The Bosch process involves a cyclic series of etch and passivation steps, repeated iteratively to achieve the desired depth an
  8 KB (1,150 words) - 09:01, 26 March 2024
• Jupiter II RIE Plasma Etcher
  [[Category:Etch]] | Instrument_Type = Etch
  789 bytes (104 words) - 14:09, 3 January 2024
• Oxford 80 Plus RIE
  [[Category:Etch]] | Instrument_Type = Etch
  3 KB (468 words) - 14:54, 5 March 2024
• Oxford Cobra ICP Etcher
  [[Category:Etch]] | Instrument_Type = Etch
  1 KB (199 words) - 14:08, 3 January 2024
• Process Resources
  * [https://upenn.app.box.com/file/1004242723681 Deposition and Etch Characterization of LPCVD SiNx thin films]
  1 KB (208 words) - 15:23, 3 July 2023
• QNF Equipment Owner Matrix
  | Anatech SCE-108 Barrel Asher || DE-02 || Dry Etch || [[Kyle Keenan | Kyle Keenan]] | SPTS Si DRIE || DE-03 || Dry Etch || [[Sam Azadi | Sam Azadi]]
  6 KB (758 words) - 13:58, 18 April 2024
• QNF Staff
  |AreasResponsibility = Etch <br> Deposition
  3 KB (287 words) - 09:28, 20 March 2024
• Resists at QNF
  ...17tkubb36ylzt SPR 220-3] || + || Ethyl lactate, anisole, n-amyl acetate || Etch, 2um-5um || [https://wiki.nano.upenn.edu/wiki/index.php?title=SUSS_MicroTec ...tkubb36ylzt SPR 220-4.5] || + || Ethyl lactate, anisole, n-amyl acetate || Etch || [https://wiki.nano.upenn.edu/wiki/index.php?title=SUSS_MicroTec_MA6_Gen3
  14 KB (2,180 words) - 14:15, 28 March 2024
• SPTS/Xactix XeF2 Isotropic Etcher
  | Instrument_Type = Etch ...Given a constant gas pressure, the higher the surface area, the lower the etch rate. Nitrogen gas can be introduced in the chamber to increase selectivity
  1 KB (212 words) - 14:09, 3 January 2024
• SPTS Si DRIE
  [[Category:Etch]] | Instrument_Type = Etch
  2 KB (365 words) - 10:36, 9 April 2024
• Sam Azadi
  |AreasResponsibility = Etch, <br> Deposition
  1 KB (161 words) - 14:53, 29 April 2022
• Sandvik Furnace Stack
  * [https://repository.upenn.edu/scn_protocols/74/ Deposition and Etch Characterization of LPCVD SiNx]
  2 KB (324 words) - 10:11, 29 January 2024