SiO2 (silicon dioxide)

Silicon dioxide is an insulating, transparent oxide that is highly unreactive. It is often used as a passivation layer to protect electrical components.

Equipment

Deposition Equipment

• ALD-01: Cambridge Nanotech S200 ALD
• CVD-01: Oxford PlasmaLab 100 PECVD
• CVD-02: Sandvik Furnace Stack
• PVD-02: Lesker PVD75 E-Beam/Thermal Evaporator
• PVD-03: Lesker PVD75 DC/RF Sputterer
• PVD-05: Denton Explorer14 Magnetron Sputterer

Etching Equipment

• DE-04: Oxford 80 Plus RIE
• DE-05: Oxford Cobra ICP Etcher

Processes

ALD Master Recipe

ALD-01 Process Parameters:

Material Name	Precursor 1			Precursor 2			Dep. temperature [C]	Carrier flow [sccm]	Dep. rate [A/cyc]	Date [MM/DD/YY]
	Name	Pulse time [s]	Wait time [s] : Stop Valve closed / open	Name	Pulse time [s]	Wait time [s] : Stop Valve closed / open
SiO2	BDEAS	0.02	5 SV closed/ 3 SV open	O3	0.2	20 SV closed/ 5 SV open	200	20	0.6	02/12/24

Sputter Deposition Rates

PVD Tool	Cathode 1 (RF)			Recorded
	Pressure	Power	Rate
PVD-03	3 mTorr	200 W	Å s-1

PVD Tool	Cathode 1 (RF)			Recorded
	Pressure	Power	Rate
PVD-05	3 mTorr	200 W	Å s-1