Difference between revisions of "SiO2 (silicon dioxide)"
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===Sputter Deposition Rates=== | ===Sputter Deposition Rates=== | ||
| + | |||
| + | {| class="wikitable" | ||
| + | ! rowspan=2 | PVD Tool | ||
| + | ! colspan=3 | Cathode 1 (RF) | ||
| + | ! rowspan=2 | Recorded | ||
| + | |- | ||
| + | ! Pressure || Power || Rate | ||
| + | |- | ||
| + | | PVD-03 || 3 mTorr || 200 W || Å s<sup>-1</sup> | ||
| + | |- | ||
| + | |} | ||
| + | |||
| + | {| class="wikitable" | ||
| + | ! rowspan=2 | PVD Tool | ||
| + | ! colspan=3 | Cathode 1 (RF) | ||
| + | ! rowspan=2 | Recorded | ||
| + | |- | ||
| + | ! Pressure || Power || Rate | ||
| + | |- | ||
| + | | PVD-05 || 3 mTorr || 200 W || Å s<sup>-1</sup> | ||
| + | |- | ||
| + | |} | ||
Revision as of 13:29, 20 May 2024
Silicon dioxide is an insulating, transparent oxide that is highly unreactive. It is often used as a passivation layer to protect electrical components.
Equipment
Deposition Equipment
- ALD-01: Cambridge Nanotech S200 ALD
- CVD-01: Oxford PlasmaLab 100 PECVD
- CVD-02: Sandvik Furnace Stack
- PVD-02: Lesker PVD75 E-Beam/Thermal Evaporator
- PVD-03: Lesker PVD75 DC/RF Sputterer
- PVD-05: Denton Explorer14 Magnetron Sputterer
Etching Equipment
- DE-04: Oxford 80 Plus RIE
- DE-05: Oxford Cobra ICP Etcher
Applications
Processes
Sputter Deposition Rates
| PVD Tool | Cathode 1 (RF) | Recorded | ||
|---|---|---|---|---|
| Pressure | Power | Rate | ||
| PVD-03 | 3 mTorr | 200 W | Å s-1 | |
| PVD Tool | Cathode 1 (RF) | Recorded | ||
|---|---|---|---|---|
| Pressure | Power | Rate | ||
| PVD-05 | 3 mTorr | 200 W | Å s-1 | |