Difference between revisions of "SiO2 (silicon dioxide)"

Latest revision as of 11:49, 24 September 2024

Silicon dioxide is an insulating, transparent oxide that is highly unreactive. It is often used as a passivation layer to protect electrical components.

Equipment

Deposition Equipment

ALD-01: Cambridge Nanotech S200 ALD
CVD-01: Oxford PlasmaLab 100 PECVD
CVD-02: Sandvik Furnace Stack
PVD-02: Lesker PVD75 E-Beam/Thermal Evaporator
PVD-03: Lesker PVD75 DC/RF Sputterer
PVD-05: Denton Explorer14 Magnetron Sputterer

Etching Equipment

DE-04: Oxford 80 Plus RIE
DE-05: Oxford Cobra ICP Etcher

Applications

Processes

PECVD Process Data

LPCVD Process Parameters

BYU has an excellent online calculator you can use to find out how much time your process would take for a given thickness and temperature. https://cleanroom.byu.edu/oxidetimecalc

ALD Process Parameters

ALD-01 Master Recipe:

Material Name	Precursor 1			Precursor 2			Dep. temperature [C]	Carrier flow [sccm]	Dep. rate [A/cyc]	Date [MM/DD/YY]
Material Name	Name	Pulse time [s]	Wait time [s] : Stop Valve closed / open	Name	Pulse time [s]	Wait time [s] : Stop Valve closed / open	Dep. temperature [C]	Carrier flow [sccm]	Dep. rate [A/cyc]	Date [MM/DD/YY]
SiO₂	BDEAS	0.02	5 SV closed/ 3 SV open	O₃	0.2	20 SV closed/ 5 SV open	200	20	0.6	02/12/24

Sputter Deposition Rates

PVD Tool	Cathode 1 (RF)			Recorded
PVD Tool	Pressure	Power	Rate	Recorded
PVD-03	3 mTorr	140 W	Å s^-1

PVD Tool	Cathode 1 (RF)			Recorded
PVD Tool	Pressure	Power	Rate	Recorded
PVD-05	3 mTorr	140 W	Å s^-1

@@ Line 58: / Line 58: @@
 ! Pressure || Power || Rate
 |-
-| PVD-03 || 3 mTorr || 200 W ||  Å s<sup>-1</sup>
+| PVD-03 || 3 mTorr || 140 W ||  Å s<sup>-1</sup>
 |-
 |}
@@ Line 69: / Line 69: @@
 ! Pressure || Power || Rate
 |-
-| PVD-05 || 3 mTorr || 200 W ||  Å s<sup>-1</sup>
+| PVD-05 || 3 mTorr || 140 W ||  Å s<sup>-1</sup>
 |-
 |}