Difference between revisions of "SiO2 (silicon dioxide)"
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==Processes== | ==Processes== | ||
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| + | ===PECVD Process Data=== | ||
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| + | <pdf height="800">File:Oxford_PECVD_SiO2_deposition.pdf</pdf> | ||
===ALD Master Recipe=== | ===ALD Master Recipe=== | ||
Revision as of 13:44, 20 May 2024
Silicon dioxide is an insulating, transparent oxide that is highly unreactive. It is often used as a passivation layer to protect electrical components.
Equipment
Deposition Equipment
- ALD-01: Cambridge Nanotech S200 ALD
- CVD-01: Oxford PlasmaLab 100 PECVD
- CVD-02: Sandvik Furnace Stack
- PVD-02: Lesker PVD75 E-Beam/Thermal Evaporator
- PVD-03: Lesker PVD75 DC/RF Sputterer
- PVD-05: Denton Explorer14 Magnetron Sputterer
Etching Equipment
- DE-04: Oxford 80 Plus RIE
- DE-05: Oxford Cobra ICP Etcher
Applications
Processes
PECVD Process Data
ALD Master Recipe
ALD-01 Process Parameters:
| Material Name | Precursor 1 | Precursor 2 | Dep. temperature [C] | Carrier flow [sccm] | Dep. rate [A/cyc] | Date [MM/DD/YY] | ||||
|---|---|---|---|---|---|---|---|---|---|---|
| Name | Pulse time [s] | Wait time [s] : Stop Valve closed / open | Name | Pulse time [s] | Wait time [s] : Stop Valve closed / open | |||||
| SiO2 | BDEAS | 0.02 | 5 SV closed/ 3 SV open | O3 | 0.2 | 20 SV closed/ 5 SV open | 200 | 20 | 0.6 | 02/12/24 |
Sputter Deposition Rates
| PVD Tool | Cathode 1 (RF) | Recorded | ||
|---|---|---|---|---|
| Pressure | Power | Rate | ||
| PVD-03 | 3 mTorr | 200 W | Å s-1 | |
| PVD Tool | Cathode 1 (RF) | Recorded | ||
|---|---|---|---|---|
| Pressure | Power | Rate | ||
| PVD-05 | 3 mTorr | 200 W | Å s-1 | |