Difference between revisions of "SiO2 (silicon dioxide)"

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==Processes==
 
==Processes==
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===ALD Master Recipe===
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{| class="wikitable"
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! rowspan=2 |Material Name
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! colspan=3 |Precursor 1
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! colspan =3 |Precursor 2
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! rowspan=2 |Dep. temperature [C]
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!rowspan=2 | Carrier flow [sccm]
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!rowspan=2 | Dep. rate [A/cyc]
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!rowspan=2 |Date [MM/DD/YY]
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|-
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! Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open || Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open
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|-
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| SiO<sub>2</sub> || BDEAS || 0.02 || 5 SV closed/ 3 SV open || O<sub>3</sub> || 0.2 || 20 SV closed/ 5 SV open  || 200 || 20 || 0.6 || 02/12/24
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|-
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|}
  
 
===Sputter Deposition Rates===
 
===Sputter Deposition Rates===

Revision as of 13:33, 20 May 2024

Silicon dioxide is an insulating, transparent oxide that is highly unreactive. It is often used as a passivation layer to protect electrical components.

Equipment

Deposition Equipment

Etching Equipment

Applications

Processes

ALD Master Recipe

Material Name Precursor 1 Precursor 2 Dep. temperature [C] Carrier flow [sccm] Dep. rate [A/cyc] Date [MM/DD/YY]
Name Pulse time [s] Wait time [s] : Stop Valve closed / open Name Pulse time [s] Wait time [s] : Stop Valve closed / open
SiO2 BDEAS 0.02 5 SV closed/ 3 SV open O3 0.2 20 SV closed/ 5 SV open 200 20 0.6 02/12/24

Sputter Deposition Rates

PVD Tool Cathode 1 (RF) Recorded
Pressure Power Rate
PVD-03 3 mTorr 200 W Å s-1
PVD Tool Cathode 1 (RF) Recorded
Pressure Power Rate
PVD-05 3 mTorr 200 W Å s-1