Difference between revisions of "SiO2 (silicon dioxide)"

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===Etching Equipment===
 
===Etching Equipment===
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* '''DE-04:''' [[Oxford 80 Plus RIE | Oxford 80 Plus RIE]]
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* '''DE-05:'''[[Oxford Cobra ICP Etcher | Oxford Cobra ICP Etcher]]
  
 
==Applications==
 
==Applications==
  
 
==Processes==
 
==Processes==
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 +
===PECVD Process Data===
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<pdf height="800">File:Oxford_PECVD_SiO2_deposition.pdf</pdf>
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 +
===LPCVD Process Parameters===
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 +
BYU has an excellent online calculator you can use to find out how much time your process would take for a given thickness and temperature.
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https://cleanroom.byu.edu/oxidetimecalc
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 +
===ALD Process Parameters===
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 +
'''ALD-01 Master Recipe:'''
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{| class="wikitable"
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! rowspan=2 |Material Name
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! colspan=3 |Precursor 1
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! colspan =3 |Precursor 2
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! rowspan=2 |Dep. temperature [C]
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!rowspan=2 | Carrier flow [sccm]
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!rowspan=2 | Dep. rate [A/cyc]
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!rowspan=2 |Date [MM/DD/YY]
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|-
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! Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open || Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open
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|-
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| SiO<sub>2</sub> || BDEAS || 0.02 || 5 SV closed/ 3 SV open || O<sub>3</sub> || 0.2 || 20 SV closed/ 5 SV open  || 200 || 20 || 0.6 || 02/12/24
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|-
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|}
  
 
===Sputter Deposition Rates===
 
===Sputter Deposition Rates===
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{| class="wikitable"
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! rowspan=2 | PVD Tool
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! colspan=3 | Cathode 1 (RF)
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! rowspan=2 | Recorded
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|-
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! Pressure || Power || Rate
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|-
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| PVD-03 || 3 mTorr || 140 W ||  Å s<sup>-1</sup>
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|-
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|}
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{| class="wikitable"
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! rowspan=2 | PVD Tool
 +
! colspan=3 | Cathode 1 (RF)
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! rowspan=2 | Recorded
 +
|-
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! Pressure || Power || Rate
 +
|-
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| PVD-05 || 3 mTorr || 140 W ||  Å s<sup>-1</sup>
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|-
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|}

Latest revision as of 10:49, 24 September 2024

Silicon dioxide is an insulating, transparent oxide that is highly unreactive. It is often used as a passivation layer to protect electrical components.

Equipment

Deposition Equipment

Etching Equipment

Applications

Processes

PECVD Process Data

LPCVD Process Parameters

BYU has an excellent online calculator you can use to find out how much time your process would take for a given thickness and temperature. https://cleanroom.byu.edu/oxidetimecalc

ALD Process Parameters

ALD-01 Master Recipe:

Material Name Precursor 1 Precursor 2 Dep. temperature [C] Carrier flow [sccm] Dep. rate [A/cyc] Date [MM/DD/YY]
Name Pulse time [s] Wait time [s] : Stop Valve closed / open Name Pulse time [s] Wait time [s] : Stop Valve closed / open
SiO2 BDEAS 0.02 5 SV closed/ 3 SV open O3 0.2 20 SV closed/ 5 SV open 200 20 0.6 02/12/24

Sputter Deposition Rates

PVD Tool Cathode 1 (RF) Recorded
Pressure Power Rate
PVD-03 3 mTorr 140 W Å s-1
PVD Tool Cathode 1 (RF) Recorded
Pressure Power Rate
PVD-05 3 mTorr 140 W Å s-1
Retrieved from "https://wiki.nano.upenn.edu/wiki/index.php?title=SiO2_(silicon_dioxide)&oldid=2019"