Developers at QNF
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The following are developers you may encounter in the QNF wet benches.
Please note: Cross contaminating inorganic developer baths with tetramethylammonium hydroxide (TMAH) based metal ion free developers, even at parts per million levels, will seriously degrade or completely neutralize the dissolution performance of the inorganic developer. Use extreme caution when sharing dishes between a TMAH based developer and an inorganic process and always keep the developer types segregated when both are present.
| Name | Manufacturer | Chemical Composition | Hazards | Use | Alternatives |
|---|---|---|---|---|---|
| TMAH 0.26N | KemLab | 0.26N TMAH (Metal Ion Free) | Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) | Photoresist Development (e.g. S1800 series, IP3500), Liftoff Resists, HMDS Removal, Aluminum Etchant | CD-26, AZ300MIF |
| CD-26 | Microposit/Dupont | 0.26N TMAH (Metal Ion Free) | Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) | Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant | TMAH 0.26N (preferred), AZ300MIF |
| AZ300 MIF | AZ Materials/Merck | 0.26N TMAH (Metal Ion Free) | Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) | Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant | TMAH 0.26N (preferred), CD-26 |
| CD-26A | Microposit/Dupont | 0.26N TMAH (Metal Ion Free) w/ Surfactant | Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) | Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant | AZ917MIF, TMAH 0.26N, CD-26, AZ300MIF |
| AZ917 MIF | AZ Materials/Merck | 0.26N TMAH (Metal Ion Free) w/ Surfactant | Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) | Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant | CD-26A, TMAH 0.26N, CD-26, AZ300MIF |
| MF321 | Microposit/Dupont | 0.21N TMAH (Metal Ion Free) w/ Surfactant | Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) | Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant | AZ422 MIF, TMAH 0.26N |
| AZ422 MIF | AZ Materials/Merck | 0.21N TMAH (Metal Ion Free) w/ Surfactant | Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) | Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant | MF321, TMAH 0.26N |
| AZ400K | AZ Materials/Merck | Potassium Borates (Metal Ion Bearing) | Strong Base -- Irritant, Corrosive | Development of Thick Photoresists (AZP4620), Mask Plates (AZ1500) -- Manually dilute 1:3 or 1:4 with DI water | |
| SU-8 Developer | MicroChem/Kayaku | PGMEA (1-methoxy-2-propanol acetate) | Organic Solvent -- Flammable | SU-8, HARE SQ, IP-S & IP-Dip Development | HARE SQ Developer (preferred) |
| HARE SQ Developer | KemLab | PGMEA (1-methoxy-2-propanol acetate) | Organic Solvent -- Flammable | HARE SQ, SU-8, IP-S & IP-Dip Development | SU-8 Developer |
| O-Xylene | N/A | O-Xylene | Organic Solvent -- Flammable, Irritant | ZEP520 | Amyl Acetate (preferred) |