PECVD SiO2 via CF4

Goal

The purpose of this document is to examine the etch properties of the Oxford 80 Plus RIE system and to find the etch rate of SiO2 and S1818 MicroChem positive resist.

Materials

Microchem S1818 Photoresist
Microchem MF-319 Developer
4 inch Silicon Wafers

Equipment

Torrey Pines Scientific hotplate
ReynoldsTech spinner
Oxford PlasmaLab 100 PECVD
Oxford 80 Plus RIE
SUSS MicroTec MA6 Gen3 Mask Aligner

Units

Gas flow rate: standard cubic centimeters per minute (sccm)
Pressure: milliTorr (mT)
Temperature: degrees Celsius (C)
High frequency (RF) power: Watts (W)

Protocol

Coat

1. Mount wafer and ensure that it is centered.

2. Deposit 7 milliliters of S1818 photoresist in the center of the wafer.

3. Spin on photoresist at 4500 RPM for 60 Seconds.

Soft Bake

1. Bake wafer at 130 °C for 180 seconds.

Expose

1. Use the photomask to expose the wafer at 1000 mJ/cm2 Develop

1. Dispense approximately 150 milliliters of MF-319 developer into a six inch cylindrical container.

2. Fully submerge the exposed wafer.

3. Agitate and develop the wafer for 300 seconds.

Etch

1. Pump to 5e-04 Torr, “Pump to Pressure” checked.

2. Etch Step

* Trifluoromethane (CHF3) flow rate: 100 sccm Oxygen (O2) flow rate: 4 sccm

- Pressure: 50 mT
- RF Power: 150 W
- Capacitor starting points: Capacitor #1: 60 %, Capacitor #2: 80 %