Difference between revisions of "Developers at QNF"
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! Name !! Manufacturer !! Chemical Composition !! Hazards !! Use !! Alternatives | ! Name !! Manufacturer !! Chemical Composition !! Hazards !! Use !! Alternatives | ||
|- | |- | ||
| − | | TMAH 0.26N || KemLab || 0.26N TMAH (Metal Ion Free) || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || | + | | TMAH 0.26N || KemLab || 0.26N TMAH (Metal Ion Free) || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || Photoresist Development (e.g. S1800 series, IP3500), Liftoff Resists, HMDS Removal, Aluminum Etchant || CD-26, AZ300MIF |
|- | |- | ||
| − | | CD-26 || Microposit/Dupont || 0.26N TMAH (Metal Ion Free) || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || | + | | CD-26 || Microposit/Dupont || 0.26N TMAH (Metal Ion Free) || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant || TMAH 0.26N (preferred), AZ300MIF |
|- | |- | ||
| − | | AZ300 MIF || AZ Materials/Merck || 0.26N TMAH (Metal Ion Free) || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || | + | | AZ300 MIF || AZ Materials/Merck || 0.26N TMAH (Metal Ion Free) || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant || TMAH 0.26N (preferred), CD-26 |
|- | |- | ||
| − | | CD-26A || Microposit/Dupont || 0.26N TMAH (Metal Ion Free) w/ Surfactant || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || || AZ917MIF, TMAH 0.26N, CD-26, AZ300MIF | + | | CD-26A || Microposit/Dupont || 0.26N TMAH (Metal Ion Free) w/ Surfactant || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant || AZ917MIF, TMAH 0.26N, CD-26, AZ300MIF |
|- | |- | ||
| − | | AZ917 MIF || AZ Materials/Merck || 0.26N TMAH (Metal Ion Free) w/ Surfactant || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || || CD-26A, TMAH 0.26N, CD-26, AZ300MIF | + | | AZ917 MIF || AZ Materials/Merck || 0.26N TMAH (Metal Ion Free) w/ Surfactant || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant || CD-26A, TMAH 0.26N, CD-26, AZ300MIF |
|- | |- | ||
| − | | MF321 || Microposit/Dupont || 0.21N TMAH (Metal Ion Free) w/ Surfactant || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || || AZ422 MIF, TMAH 0.26N | + | | MF321 || Microposit/Dupont || 0.21N TMAH (Metal Ion Free) w/ Surfactant || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant || AZ422 MIF, TMAH 0.26N |
|- | |- | ||
| − | |AZ422 MIF || AZ Materials/Merck || 0.21N TMAH (Metal Ion Free) w/ Surfactant || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || || MF321, TMAH 0.26N | + | |AZ422 MIF || AZ Materials/Merck || 0.21N TMAH (Metal Ion Free) w/ Surfactant || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant || MF321, TMAH 0.26N |
|- | |- | ||
| − | | AZ400K|| AZ Materials/Merck || Potassium Borates (Metal Ion Bearing) || Strong Base -- Irritant, Corrosive || Thick Photoresists (AZP4620), Mask Plates (AZ1500) -- Manually dilute 1:3 or 1:4 with DI water || | + | | AZ400K|| AZ Materials/Merck || Potassium Borates (Metal Ion Bearing) || Strong Base -- Irritant, Corrosive || Development of Thick Photoresists (AZP4620), Mask Plates (AZ1500) -- Manually dilute 1:3 or 1:4 with DI water || |
|- | |- | ||
| − | | SU-8 Developer || MicroChem/Kayaku || PGMEA (1-methoxy-2-propanol acetate) || Organic Solvent -- Flammable || SU-8, HARE SQ, IP-Dip || SQ Developer | + | | SU-8 Developer || MicroChem/Kayaku || PGMEA (1-methoxy-2-propanol acetate) || Organic Solvent -- Flammable || SU-8, HARE SQ, IP-S & IP-Dip Development|| HARE SQ Developer (preferred) |
|- | |- | ||
| − | | SQ Developer || KemLab || PGMEA (1-methoxy-2-propanol acetate) || Organic Solvent -- Flammable || HARE SQ, SU-8, IP-Dip || SU-8 Developer | + | | HARE SQ Developer || KemLab || PGMEA (1-methoxy-2-propanol acetate) || Organic Solvent -- Flammable || HARE SQ, SU-8, IP-S & IP-Dip Development || SU-8 Developer |
|- | |- | ||
|O-Xylene || N/A || O-Xylene || Organic Solvent -- Flammable, Irritant || ZEP520 || Amyl Acetate (preferred) | |O-Xylene || N/A || O-Xylene || Organic Solvent -- Flammable, Irritant || ZEP520 || Amyl Acetate (preferred) | ||
|} | |} | ||
Latest revision as of 16:30, 18 June 2024
The following are developers you may encounter in the QNF wet benches.
| Name | Manufacturer | Chemical Composition | Hazards | Use | Alternatives |
|---|---|---|---|---|---|
| TMAH 0.26N | KemLab | 0.26N TMAH (Metal Ion Free) | Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) | Photoresist Development (e.g. S1800 series, IP3500), Liftoff Resists, HMDS Removal, Aluminum Etchant | CD-26, AZ300MIF |
| CD-26 | Microposit/Dupont | 0.26N TMAH (Metal Ion Free) | Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) | Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant | TMAH 0.26N (preferred), AZ300MIF |
| AZ300 MIF | AZ Materials/Merck | 0.26N TMAH (Metal Ion Free) | Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) | Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant | TMAH 0.26N (preferred), CD-26 |
| CD-26A | Microposit/Dupont | 0.26N TMAH (Metal Ion Free) w/ Surfactant | Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) | Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant | AZ917MIF, TMAH 0.26N, CD-26, AZ300MIF |
| AZ917 MIF | AZ Materials/Merck | 0.26N TMAH (Metal Ion Free) w/ Surfactant | Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) | Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant | CD-26A, TMAH 0.26N, CD-26, AZ300MIF |
| MF321 | Microposit/Dupont | 0.21N TMAH (Metal Ion Free) w/ Surfactant | Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) | Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant | AZ422 MIF, TMAH 0.26N |
| AZ422 MIF | AZ Materials/Merck | 0.21N TMAH (Metal Ion Free) w/ Surfactant | Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) | Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant | MF321, TMAH 0.26N |
| AZ400K | AZ Materials/Merck | Potassium Borates (Metal Ion Bearing) | Strong Base -- Irritant, Corrosive | Development of Thick Photoresists (AZP4620), Mask Plates (AZ1500) -- Manually dilute 1:3 or 1:4 with DI water | |
| SU-8 Developer | MicroChem/Kayaku | PGMEA (1-methoxy-2-propanol acetate) | Organic Solvent -- Flammable | SU-8, HARE SQ, IP-S & IP-Dip Development | HARE SQ Developer (preferred) |
| HARE SQ Developer | KemLab | PGMEA (1-methoxy-2-propanol acetate) | Organic Solvent -- Flammable | HARE SQ, SU-8, IP-S & IP-Dip Development | SU-8 Developer |
| O-Xylene | N/A | O-Xylene | Organic Solvent -- Flammable, Irritant | ZEP520 | Amyl Acetate (preferred) |