Difference between revisions of "Developers at QNF"

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! Name !! Manufacturer !! Chemical Composition !! Hazards !! Resist Compatibility !! Alternatives
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! Name !! Manufacturer !! Chemical Composition !! Hazards !! Use !! Alternatives
 
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| TMAH 0.26N || KemLab || 0.26N TMAH (Metal Ion Free) || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || Photoresists, Liftoff Resists || CD-26, AZ300MIF
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| TMAH 0.26N || KemLab || 0.26N TMAH (Metal Ion Free) || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || Photoresist Development (e.g. S1800 series, IP3500), Liftoff Resists, HMDS Removal, Aluminum Etchant || CD-26, AZ300MIF
 
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|-
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| CD-26 || Microposit/Dupont || 0.26N TMAH (Metal Ion Free) || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || Photoresists, Liftoff Resists || TMAH 0.26N, AZ300MIF
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| CD-26 || Microposit/Dupont || 0.26N TMAH (Metal Ion Free) || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant || TMAH 0.26N (preferred), AZ300MIF
 
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| AZ300 MIF || AZ Materials/Merck || 0.26N TMAH (Metal Ion Free) || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || Photoresists, Liftoff Resists || TMAH 0.26N, CD-26
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| AZ300 MIF || AZ Materials/Merck || 0.26N TMAH (Metal Ion Free) || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant || TMAH 0.26N (preferred), CD-26
 
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| CD-26A || Microposit/Dupont || 0.26N TMAH (Metal Ion Free) w/ Surfactant || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || || AZ917MIF, TMAH 0.26N, CD-26, AZ300MIF
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| CD-26A || Microposit/Dupont || 0.26N TMAH (Metal Ion Free) w/ Surfactant || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant || AZ917MIF, TMAH 0.26N, CD-26, AZ300MIF
 
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| AZ917 MIF || AZ Materials/Merck || 0.26N TMAH (Metal Ion Free) w/ Surfactant || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || || CD-26A, TMAH 0.26N, CD-26, AZ300MIF
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| AZ917 MIF || AZ Materials/Merck || 0.26N TMAH (Metal Ion Free) w/ Surfactant || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant || CD-26A, TMAH 0.26N, CD-26, AZ300MIF
 
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| MF321 || Microposit/Dupont || 0.21N TMAH (Metal Ion Free) w/ Surfactant || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || || AZ422 MIF, TMAH 0.26N
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| MF321 || Microposit/Dupont || 0.21N TMAH (Metal Ion Free) w/ Surfactant || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant || AZ422 MIF, TMAH 0.26N
 
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|AZ422 MIF || AZ Materials/Merck || 0.21N TMAH (Metal Ion Free) w/ Surfactant || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || || MF321, TMAH 0.26N
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|AZ422 MIF || AZ Materials/Merck || 0.21N TMAH (Metal Ion Free) w/ Surfactant || Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) || Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant || MF321, TMAH 0.26N
 
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| AZ400K 1:4 || AZ Materials/Merck || Buffered Potassium Hydroxide/Borates (Metal Ion Bearing), 1:4 H2O Dilution || Strong Base -- Irritant, Corrosive || Thick Photoresists (AZP4620), Maskplates (AZ1500) ||  
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| AZ400K|| AZ Materials/Merck || Potassium Borates (Metal Ion Bearing) || Strong Base -- Irritant, Corrosive || Development of Thick Photoresists (AZP4620), Mask Plates (AZ1500) -- Manually dilute 1:3 or 1:4 with DI water ||  
 
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| SU-8 Developer || MicroChem/Kayaku || PGMEA (1-methoxy-2-propanol acetate) || Organic Solvent -- Flammable || SU-8, HARE SQ, IP-Dip || SQ Developer
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| SU-8 Developer || MicroChem/Kayaku || PGMEA (1-methoxy-2-propanol acetate) || Organic Solvent -- Flammable || SU-8, HARE SQ, IP-S & IP-Dip Development|| HARE SQ Developer (preferred)
 
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|-
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| SQ Developer || KemLab || PGMEA (1-methoxy-2-propanol acetate) || Organic Solvent -- Flammable || HARE SQ, SU-8, IP-Dip || SU-8 Developer
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| HARE SQ Developer || KemLab || PGMEA (1-methoxy-2-propanol acetate) || Organic Solvent -- Flammable || HARE SQ, SU-8, IP-S & IP-Dip Development || SU-8 Developer
 
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|O-Xylene ||  || O-Xylene || Organic Solvent -- Flammable, Irritant || ZEP520 || Amyl Acetate
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|O-Xylene || N/A || O-Xylene || Organic Solvent -- Flammable, Irritant || ZEP520 || Amyl Acetate (preferred)
 
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Latest revision as of 16:30, 18 June 2024

The following are developers you may encounter in the QNF wet benches.

Name Manufacturer Chemical Composition Hazards Use Alternatives
TMAH 0.26N KemLab 0.26N TMAH (Metal Ion Free) Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) Photoresist Development (e.g. S1800 series, IP3500), Liftoff Resists, HMDS Removal, Aluminum Etchant CD-26, AZ300MIF
CD-26 Microposit/Dupont 0.26N TMAH (Metal Ion Free) Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant TMAH 0.26N (preferred), AZ300MIF
AZ300 MIF AZ Materials/Merck 0.26N TMAH (Metal Ion Free) Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant TMAH 0.26N (preferred), CD-26
CD-26A Microposit/Dupont 0.26N TMAH (Metal Ion Free) w/ Surfactant Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant AZ917MIF, TMAH 0.26N, CD-26, AZ300MIF
AZ917 MIF AZ Materials/Merck 0.26N TMAH (Metal Ion Free) w/ Surfactant Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant CD-26A, TMAH 0.26N, CD-26, AZ300MIF
MF321 Microposit/Dupont 0.21N TMAH (Metal Ion Free) w/ Surfactant Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant AZ422 MIF, TMAH 0.26N
AZ422 MIF AZ Materials/Merck 0.21N TMAH (Metal Ion Free) w/ Surfactant Strong Base -- Toxic, Irritant (can cause chemical burns, lethal for high surface areas) Photoresist Development, Liftoff Resists, HMDS Removal, Aluminum Etchant MF321, TMAH 0.26N
AZ400K AZ Materials/Merck Potassium Borates (Metal Ion Bearing) Strong Base -- Irritant, Corrosive Development of Thick Photoresists (AZP4620), Mask Plates (AZ1500) -- Manually dilute 1:3 or 1:4 with DI water
SU-8 Developer MicroChem/Kayaku PGMEA (1-methoxy-2-propanol acetate) Organic Solvent -- Flammable SU-8, HARE SQ, IP-S & IP-Dip Development HARE SQ Developer (preferred)
HARE SQ Developer KemLab PGMEA (1-methoxy-2-propanol acetate) Organic Solvent -- Flammable HARE SQ, SU-8, IP-S & IP-Dip Development SU-8 Developer
O-Xylene N/A O-Xylene Organic Solvent -- Flammable, Irritant ZEP520 Amyl Acetate (preferred)
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