Difference between revisions of "Veeco Savannah 200"
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===== SOPs & Troubleshooting ===== | ===== SOPs & Troubleshooting ===== | ||
* [https://repository.upenn.edu/scn_sop/6/ QNF SOP] | * [https://repository.upenn.edu/scn_sop/6/ QNF SOP] | ||
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+ | |||
+ | ===== Protocols and Reports ===== | ||
+ | |||
+ | * [https://repository.upenn.edu/scn_protocols/72/ ALD deposition of SiO<sub>2</sub> using BDEAS and Ozone precursors] |
Revision as of 11:04, 22 February 2023
Tool Name | Creating Veeco Savannah 200 |
---|---|
Instrument Type | Deposition |
Staff Manager | Sam Azadi |
Lab Location | Bay 2 |
Tool Manufacturer | Veeco |
Tool Model | Savannah 200 |
NEMO Designation | {{{NEMO_Designation}}} |
Lab Phone | 215-898-9736 |
SOP Link | SOP |
Description
Savannah is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode for thin film deposition on Ultra High Aspect Ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1. Savannah is capable of holding substrates of different sizes up to 200mm. The Savannah thin film deposition systems are equipped with Pd, Pt precursors, TMA, HfCl4, BDEAS and Ozone.
Films
- Pt
- Al2O3
- Pd
- SiO2
- Under development: Hafnia (using HfCl4 and O3)
Resources
Most Recent Deposition Rates
Material Name | Precursor 1 | Precursor 2 | Dep. temperature [C] | Carrier flow [sccm] | Dep. rate [A/cyc] | Date [MM/DD/YY] | ||||
---|---|---|---|---|---|---|---|---|---|---|
Name | Pulse time [s] | Wait time [s] | Name | Pulse time [s] | Wait time [s] | |||||
Al2O3 | TMA | 0.015 | 5 | O3 | 0.05 | 5 | 200 | 20 | 1.1 | 10/17/22 |
Pt | MeCpPtMe3 | 0.6 | 5 | O3 | 0.05 | 5 | 200 | 20 | 0.7 | 10/18/22 |
Material Name | Precursor 1 | Precursor 2 | Dep. temperature [C] | Carrier flow [sccm] | Dep. rate [A/cyc] | Date [MM/DD/YY] | ||||
---|---|---|---|---|---|---|---|---|---|---|
Name | Pulse time [s] | Wait time [s] : Stop Valve closed / open | Name | Pulse time [s] | Wait time [s] : Stop Valve closed / open | |||||
SiO2 | BDEAS | 0.3 | 5 SV closed/ 8 SV open | O3 | 0.015 | 5 SV closed/ 8 SV open | 200 | 20 | 1.3 | 02/22/23 |
-Note that Pt deposition saturates at ~ 10 nm and the deposition rate only applies to thicknesses of ~ 5 - 10nm.
-Thin film sheet resistance of Pt deposited using the process parameters above at ~ 10 nm is: ~ 30 Ohm/Sq
SOPs & Troubleshooting