Difference between revisions of "PECVD SiO2 via CF4"
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(Created page with "== Goal == The purpose of this document is to examine the etch properties of the Oxford 80 Plus RIE system and to find the etch rate of SiO2 and S1818 MicroChem positive resi...") |
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== Materials == | == Materials == | ||
| − | + | * Microchem S1818 Photoresist | |
| − | + | * Microchem MF-319 Developer | |
| − | + | * 4 inch Silicon Wafers | |
== Equipment == | == Equipment == | ||
| − | + | ||
| − | + | * Torrey Pines Scientific hotplate | |
| − | + | * ReynoldsTech spinner | |
| − | + | * [[Oxford PlasmaLab 100 PECVD]] | |
| − | + | * [[Oxford 80 Plus RIE equipped with graphite platen]] | |
| − | Units | + | * [[SUSS MicroTec MA6 Gen3 Mask Aligner]] |
| − | + | ||
| − | + | == Units == | |
| − | + | * Gas flow rate: standard cubic centimeters per minute (sccm) | |
| − | + | * Pressure: milliTorr (mT) | |
| − | Protocol | + | * Temperature: degrees Celsius (C) |
| − | Coat | + | * High frequency (RF) power: Watts (W) |
| + | |||
| + | == Protocol == | ||
| + | === Coat === | ||
| + | |||
1. Mount wafer and ensure that it is centered. | 1. Mount wafer and ensure that it is centered. | ||
| + | |||
2. Deposit 7 milliliters of S1818 photoresist in the center of the wafer. | 2. Deposit 7 milliliters of S1818 photoresist in the center of the wafer. | ||
| + | |||
3. Spin on photoresist at 4500 RPM for 60 Seconds. | 3. Spin on photoresist at 4500 RPM for 60 Seconds. | ||
| − | Soft Bake | + | |
| + | === Soft Bake === | ||
| + | |||
1. Bake wafer at 130 °C for 180 seconds. | 1. Bake wafer at 130 °C for 180 seconds. | ||
| − | Expose | + | |
| + | === Expose === | ||
| + | |||
1. Use the photomask to expose the wafer at 1000 mJ/cm2 Develop | 1. Use the photomask to expose the wafer at 1000 mJ/cm2 Develop | ||
| + | |||
1. Dispense approximately 150 milliliters of MF-319 developer into a six inch cylindrical container. | 1. Dispense approximately 150 milliliters of MF-319 developer into a six inch cylindrical container. | ||
| + | |||
2. Fully submerge the exposed wafer. | 2. Fully submerge the exposed wafer. | ||
| + | |||
3. Agitate and develop the wafer for 300 seconds. | 3. Agitate and develop the wafer for 300 seconds. | ||
| − | Etch | + | |
| + | === Etch === | ||
| + | |||
1. Pump to 5e-04 Torr, “Pump to Pressure” checked. | 1. Pump to 5e-04 Torr, “Pump to Pressure” checked. | ||
| + | |||
2. Etch Step | 2. Etch Step | ||
| − | Trifluoromethane (CHF3) flow rate: 100 sccm Oxygen (O2) flow rate: 4 sccm | + | |
| − | Pressure: 50 mT | + | ** Trifluoromethane (CHF3) flow rate: 100 sccm Oxygen (O2) flow rate: 4 sccm |
| − | RF Power: 150 W | + | ** Pressure: 50 mT |
| − | Capacitor starting points: Capacitor #1: 60 %, Capacitor #2: 80 % | + | ** RF Power: 150 W |
| + | ** Capacitor starting points: Capacitor #1: 60 %, Capacitor #2: 80 % | ||
Revision as of 09:07, 18 June 2024
Goal
The purpose of this document is to examine the etch properties of the Oxford 80 Plus RIE system and to find the etch rate of SiO2 and S1818 MicroChem positive resist.
Materials
- Microchem S1818 Photoresist
- Microchem MF-319 Developer
- 4 inch Silicon Wafers
Equipment
- Torrey Pines Scientific hotplate
- ReynoldsTech spinner
- Oxford PlasmaLab 100 PECVD
- Oxford 80 Plus RIE equipped with graphite platen
- SUSS MicroTec MA6 Gen3 Mask Aligner
Units
- Gas flow rate: standard cubic centimeters per minute (sccm)
- Pressure: milliTorr (mT)
- Temperature: degrees Celsius (C)
- High frequency (RF) power: Watts (W)
Protocol
Coat
1. Mount wafer and ensure that it is centered.
2. Deposit 7 milliliters of S1818 photoresist in the center of the wafer.
3. Spin on photoresist at 4500 RPM for 60 Seconds.
Soft Bake
1. Bake wafer at 130 °C for 180 seconds.
Expose
1. Use the photomask to expose the wafer at 1000 mJ/cm2 Develop
1. Dispense approximately 150 milliliters of MF-319 developer into a six inch cylindrical container.
2. Fully submerge the exposed wafer.
3. Agitate and develop the wafer for 300 seconds.
Etch
1. Pump to 5e-04 Torr, “Pump to Pressure” checked.
2. Etch Step
- Trifluoromethane (CHF3) flow rate: 100 sccm Oxygen (O2) flow rate: 4 sccm
- Pressure: 50 mT
- RF Power: 150 W
- Capacitor starting points: Capacitor #1: 60 %, Capacitor #2: 80 %