Difference between revisions of "SiO2 (silicon dioxide)"
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==Processes== | ==Processes== | ||
| + | |||
| + | ===PECVD Process Data=== | ||
| + | |||
| + | <pdf height="800">File:Oxford_PECVD_SiO2_deposition.pdf</pdf> | ||
| + | |||
| + | ===LPCVD Process Parameters=== | ||
| + | |||
| + | BYU has an excellent online calculator you can use to find out how much time your process would take for a given thickness and temperature. | ||
| + | https://cleanroom.byu.edu/oxidetimecalc | ||
| + | |||
| + | ===ALD Process Parameters=== | ||
| + | |||
| + | '''ALD-01 Master Recipe:''' | ||
| + | |||
| + | {| class="wikitable" | ||
| + | ! rowspan=2 |Material Name | ||
| + | ! colspan=3 |Precursor 1 | ||
| + | ! colspan =3 |Precursor 2 | ||
| + | ! rowspan=2 |Dep. temperature [C] | ||
| + | !rowspan=2 | Carrier flow [sccm] | ||
| + | !rowspan=2 | Dep. rate [A/cyc] | ||
| + | !rowspan=2 |Date [MM/DD/YY] | ||
| + | |- | ||
| + | ! Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open || Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open | ||
| + | |- | ||
| + | | SiO<sub>2</sub> || BDEAS || 0.02 || 5 SV closed/ 3 SV open || O<sub>3</sub> || 0.2 || 20 SV closed/ 5 SV open || 200 || 20 || 0.6 || 02/12/24 | ||
| + | |- | ||
| + | |} | ||
===Sputter Deposition Rates=== | ===Sputter Deposition Rates=== | ||
Latest revision as of 14:45, 20 May 2024
Silicon dioxide is an insulating, transparent oxide that is highly unreactive. It is often used as a passivation layer to protect electrical components.
Equipment
Deposition Equipment
- ALD-01: Cambridge Nanotech S200 ALD
- CVD-01: Oxford PlasmaLab 100 PECVD
- CVD-02: Sandvik Furnace Stack
- PVD-02: Lesker PVD75 E-Beam/Thermal Evaporator
- PVD-03: Lesker PVD75 DC/RF Sputterer
- PVD-05: Denton Explorer14 Magnetron Sputterer
Etching Equipment
- DE-04: Oxford 80 Plus RIE
- DE-05: Oxford Cobra ICP Etcher
Applications
Processes
PECVD Process Data
LPCVD Process Parameters
BYU has an excellent online calculator you can use to find out how much time your process would take for a given thickness and temperature. https://cleanroom.byu.edu/oxidetimecalc
ALD Process Parameters
ALD-01 Master Recipe:
| Material Name | Precursor 1 | Precursor 2 | Dep. temperature [C] | Carrier flow [sccm] | Dep. rate [A/cyc] | Date [MM/DD/YY] | ||||
|---|---|---|---|---|---|---|---|---|---|---|
| Name | Pulse time [s] | Wait time [s] : Stop Valve closed / open | Name | Pulse time [s] | Wait time [s] : Stop Valve closed / open | |||||
| SiO2 | BDEAS | 0.02 | 5 SV closed/ 3 SV open | O3 | 0.2 | 20 SV closed/ 5 SV open | 200 | 20 | 0.6 | 02/12/24 |
Sputter Deposition Rates
| PVD Tool | Cathode 1 (RF) | Recorded | ||
|---|---|---|---|---|
| Pressure | Power | Rate | ||
| PVD-03 | 3 mTorr | 200 W | Å s-1 | |
| PVD Tool | Cathode 1 (RF) | Recorded | ||
|---|---|---|---|---|
| Pressure | Power | Rate | ||
| PVD-05 | 3 mTorr | 200 W | Å s-1 | |