Difference between revisions of "Veeco Savannah 200"

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===== SOPs & Troubleshooting =====
 
===== SOPs & Troubleshooting =====
 
* [https://repository.upenn.edu/scn_sop/6/ QNF SOP]
 
* [https://repository.upenn.edu/scn_sop/6/ QNF SOP]
 +
* [https://upenn.box.com/s/3hq8iik8jeb1385mrwgs16i6vfpvxt6f ALD KOH Cleaning Procedure]
  
 
===== Protocols and Reports =====
 
===== Protocols and Reports =====
  
 
* [https://repository.upenn.edu/scn_protocols/72/ ALD deposition of SiO<sub>2</sub> using BDEAS and Ozone precursors]
 
* [https://repository.upenn.edu/scn_protocols/72/ ALD deposition of SiO<sub>2</sub> using BDEAS and Ozone precursors]

Revision as of 13:29, 26 May 2023


Creating Veeco Savannah 200
ALD-03.jpeg
Tool Name Creating Veeco Savannah 200
Instrument Type Deposition
Staff Manager Sam Azadi
Lab Location Bay 2
Tool Manufacturer Veeco
Tool Model Savannah 200
NEMO Designation {{{NEMO_Designation}}}
Lab Phone 215-898-9736
SOP Link SOP

Description

Savannah is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode for thin film deposition on Ultra High Aspect Ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1. Savannah is capable of holding substrates of different sizes up to 200mm. The Savannah thin film deposition systems are equipped with Pd, Pt precursors, TMA, HfCl4, BDEAS and Ozone.

Films
  • Pt
  • Al2O3
  • Pd
  • SiO2
  • Under development: Hafnia (using HfCl4 and O3)

Resources

Most Recent Deposition Rates
Material Name Precursor 1 Precursor 2 Dep. temperature [C] Carrier flow [sccm] Dep. rate [A/cyc] Date [MM/DD/YY]
Name Pulse time [s] Wait time [s] Name Pulse time [s] Wait time [s]
Al2O3 TMA 0.015 5 O3 0.05 5 200 20 1.1 10/17/22
Pt MeCpPtMe3 0.6 5 O3 0.05 5 200 20 0.7 10/18/22


Material Name Precursor 1 Precursor 2 Dep. temperature [C] Carrier flow [sccm] Dep. rate [A/cyc] Date [MM/DD/YY]
Name Pulse time [s] Wait time [s] : Stop Valve closed / open Name Pulse time [s] Wait time [s] : Stop Valve closed / open
SiO2 BDEAS 0.3 5 SV closed/ 8 SV open O3 0.015 5 SV closed/ 8 SV open 200 20 1.5 04/05/23


-Note that Pt deposition saturates at ~ 10 nm and the deposition rate only applies to thicknesses of ~ 5 - 10nm.

-Thin film sheet resistance of Pt deposited using the process parameters above at ~ 10 nm is: ~ 30 Ohm/Sq

SOPs & Troubleshooting
Protocols and Reports