Oxford PlasmaLab 100 PECVD

Oxford PlasmaLab 100 PECVD

Tool Name	Oxford PlasmaLab 100 PECVD
Instrument Type	Deposition
Staff Manager	Sam Azadi
Lab Location	Bay 1
Tool Manufacturer	Oxford
Tool Model	PlasmaLab 100
NEMO Designation	{{{NEMO_Designation}}}
Lab Phone	215-898-9736
SOP Link	QNF SOP

Description

The QNF Oxford Instruments PlasmaLab System 100 Plasma Enhanced Chemical Vapor Deposition (PECVD) tool is used to deposit a variety of thin-film materials at relatively modest temperatures on a variety of substrate materials. The tool utilizes an RF generator to deposit thin films at temperatures lower than traditional chemical vapor deposition systems. The tool operates between 150 and 350 C.

Applications

• Silicon dioxide deposition
• Silicon nitride deposition
• Amorphous silicon deposition

Allowed material in PECVD System

• Si, Si_xN_y, SiO₂, SOI
• Hard masks compatible with process temperature

Resources

SOPs & Troubleshooting

• QNF SOP

Protocols and Reports

• SiO₂ deposition process parameters
• SiN_x deposition process parameters
• Optimization of a-Si deposition on Oxford PlasmaLab 100 PECVD using Taguchi L9 based DOE

Most Recent Deposition Rates

• SiO2:

 Recipe: optimized process parameters are in the report above
 Recipe name on the tool: Test-SiO2
 Deposition rate: ~ 286 nm/min ± 2 nm/min

• SiNx

 Recipe: optimized process parameters are in the report above
 Recipe name on the tool: Test-SiNx deposition
 Deposition rate: ~ 45 nm/min ± 2 nm/min

• a-Si

 Recipe: optimized process parameters are in the report above
 Recipe name on the tool: a-Si
 Deposition rate: ~ 56 nm/min ± 3 nm/min