Oxford 80 Plus RIE

Oxford 80 Plus RIE

Tool Name	Oxford 80 Plus RIE
Instrument Type	Etch
Staff Manager	Sam Azadi
Lab Location	Bay 2
Tool Manufacturer	Oxford Instruments
Tool Model	80+
NEMO Designation	{{{NEMO_Designation}}}
Lab Phone	215-898-9748
SOP Link	QNF SOP

Description

Oxford 80 Plus is an anisotropic dry etch tool. The main use of this tool is to etch SiO₂, and SiN_x to create hard masks for deep Si etch. However, it etches many other materials, including a variety of resists. The tool is connected to the following gases: Ar, O2, CF4, CHF3, SF6.

The plasma is ignited by the oscillating electric field created by the RF power at 13.56 MHz. The wafer is cooled down via passive cooling through a graphite chuck.

Applications

• Etch of SiO2
• Etch of SiNx
• Etch of Si
• Etch of resist

Standard Process Information

Protocols and Reports

• Reactive Ion Etching (RIE) of Silicon dioxide with tetrafluoromethane (CF₄)

• Reactive Ion Etching (RIE) of Silicon nitride with tetrafluoromethane (CF₄)

• Reactive Ion Etching (RIE) of Silicon dioxide with trifluoromethane (CHF₃) and oxygen

• Reactive Ion Etching (RIE) of Silicon nitride with trifluoromethane (CHF₃) and oxygen

• Reactive Ion Etching (RIE) selectivity of silicon dioxide and S1800 resist using trifluoromethane (CHF₃) and oxygen

• Reactive Ion Etching (RIE) selectivity of silicon and ZEP520A resist using tetrafluoromethane (CF₄)

Etch Rate

Recipe parameters are defined in the reports above.

Note: all rates are calculated from a full 4" wafers, small features may have lower etch rate.

• Etch rate of PECVD oxide and nitride are listed in the reports above.
• Etch rate of thermal SiO2 using CF4 recipe: 48 nm/min
• Etch rate of thermal SiO2 using CHF3/O2 recipe: 45 nm/min
• Etch rate of LPCVD SiNx using CF4 recipe: 50 nm/min
• Etch rate of LPCVD SiNx using CHF3/O2 recipe: 57 nm/min

Resources

Oxford 80+ Training Video

SOPs & Troubleshooting

• QNF SOP

• ATPACT Manual

• E 200T-600T Counters Manual