Oxford PlasmaLab 100 PECVD

Oxford PlasmaLab 100 PECVD

Tool Name	Oxford PlasmaLab 100 PECVD
Instrument Type	Deposition
Staff Manager	Sam Azadi
Lab Location	Bay 1
Tool Manufacturer	Oxford
Tool Model	PlasmaLab 100
NEMO Designation	{{{NEMO_Designation}}}
Lab Phone	215-898-9736
SOP Link	QNF SOP

Description

The QNF Oxford Instruments PlasmaLab System 100 Plasma Enhanced Chemical Vapor Deposition (PECVD) tool is used to deposit a variety of thin-film materials at relatively modest temperatures on a variety of substrate materials. The tool utilizes an RF generator to deposit thin films at temperatures lower than traditional chemical vapor deposition systems. The tool operates between 150 and 350 C.

Applications

• Silicon dioxide deposition
• Silicon nitride deposition
• Amorphous silicon deposition

Allowed material in PECVD System

• Si, Si_xN_y, SiO₂, SOI, SiC, GaN
• Al, Pt, Cr, W, Mo, Ti
• Hard masks compatible with process temperature

List of materials NOT allowed in the chamber

Name	symbol	Melting Point [C]
Bismuth	Bi	271
Cadmium	Cd	321
Carbon	C	Subl.
Gallium	Ga	30
Gold	Au	1062
Indium	In	157
Lead	Pb	328
Lithium	Li	179
Selenium	Se	217
Sulfur	S	115
Tellurium	Te	452
Thallium	Tl	302
Tin	Sn	232
Zinc	Zn	419

Process information

Standard process data - Table temperature = 350 C

• SiO2

Recipe parameters: optimized process parameters are in the report under "Protocols and Reports" section

Recipe name on the tool: Test-SiO2

Deposition rate: ~ 286 nm/min ± 2 nm/min

• SiNx

Recipe parameters: optimized process parameters are in the report under "Protocols and Reports" section

Recipe name on the tool: Test-SiNx deposition

Deposition rate: ~ 45 nm/min ± 2 nm/min

• a-Si

Recipe parameters: optimized process parameters are in the report under "Protocols and Reports" section

Recipe name on the tool: a-Si

Deposition rate: ~ 56 nm/min ± 3 nm/min

Special process data - adjustable table temperature

• SiO2

Recipe parameters: optimized process parameters are in the report under "Protocols and Reports" section - table temperature at 200 C

Recipe name on the tool: Test-SiO2

Deposition rate: ~ 230 nm/min ± 2 nm/min

Resources

SOPs & Troubleshooting

• QNF SOP

Protocols and Reports

• SiO₂ deposition process parameters
• SiN_x deposition process parameters
• Optimization of a-Si deposition on Oxford PlasmaLab 100 PECVD using Taguchi L9 based DOE