Difference between revisions of "Cambridge Nanotech S200 ALD"

**Cambridge Nanotech S200 ALD**
Tool Name	Cambridge Nanotech S200 ALD
Instrument Type	Deposition
Staff Manager	Sam Azadi
Lab Location	Bay 1
Tool Manufacturer	Ultratech/Cambridge
Tool Model	S200
NEMO Designation	{{{NEMO_Designation}}}
Lab Phone	215-898-9736
SOP Link	QNF SOP

Revision as of 13:03, 21 March 2023

Description

The QNF Savannah ALD is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1.

The QNF Savannah ALD is capable of holding substrates of different sizes (up to 200mm). The system is equipped with six precursor lines for deposition of Al₂O₃, HfO₂, and TiO₂.

Applications

Aluminum oxide deposition
Titanium oxide deposition
Hafnium oxide deposition
Deposition of other films can be made available upon request

Allowed material in ALD System

Si, Si_xN_y, SiO₂, SOI
Hard masks compatible with process temperature

Process Data

Standard Processes

Water based depositions

Material Name	Precursor 1			Precursor 2			Dep. temperature [C]	Carrier flow [sccm]	Dep. rate [A/cyc]	Date [MM/DD/YY]
Material Name	Name	Pulse time [s]	Wait time [s]	Name	Pulse time [s]	Wait time [s]	Dep. temperature [C]	Carrier flow [sccm]	Dep. rate [A/cyc]	Date [MM/DD/YY]
Al₂O₃	TMA	0.015	5	H₂O	0.015	5	245	20	1	03/20/23
Al₂O₃	TMA	0.015	5	H₂O	0.015	5	200	20	1	09/24/22
Al₂O₃	TMA	0.015	5	H₂O	0.015	5	150	20	0.85	03/20/23
HfO₂	TDMAHf	0.15	8	H₂O	0.015	5	200	20	1.3	09/24/22
HfO₂	TDMAHf	0.4	8	H₂O	0.015	8	150	20	1.3	02/22/23
TiO₂	TDMATi	0.4	10	H₂O	0.015	5	250	20	0.4	05/02/22
TiO₂	TDMATi	0.3	10	H₂O	0.015	10	150	20	0.5	02/17/23

Deposition Rate Monitoring

Resources

SOPs & Troubleshooting

QNF SOP

@@ Line 48: / Line 48: @@
 ! Name || Pulse time [s] || Wait time [s] || Name || Pulse time [s] || Wait time [s]
 |-
-| Al<sub>2</sub>O<sub>3</sub> || TMA || 0.015 || 5 || H<sub>2</sub>O || 0.015 || 5 || 245 || 20 || 1 || 12/16/22
+| Al<sub>2</sub>O<sub>3</sub> || TMA || 0.015 || 5 || H<sub>2</sub>O || 0.015 || 5 || 245 || 20 || 1 || 03/20/23
 |-
 | Al<sub>2</sub>O<sub>3</sub> || TMA || 0.015 || 5 || H<sub>2</sub>O || 0.015 || 5 || 200 || 20 || 1 || 09/24/22
 |-
-| Al<sub>2</sub>O<sub>3</sub> || TMA || 0.015 || 5 || H<sub>2</sub>O || 0.015 || 5 || 150 || 20 || 0.9 || 02/17/23
+| Al<sub>2</sub>O<sub>3</sub> || TMA || 0.015 || 5 || H<sub>2</sub>O || 0.015 || 5 || 150 || 20 || 0.85 || 03/20/23
 |-
 | HfO<sub>2</sub> || TDMAHf || 0.15 || 8 || H<sub>2</sub>O || 0.015 || 5 || 200 || 20 || 1.3 || 09/24/22