Difference between revisions of "Cambridge Nanotech S200 ALD"
Jump to navigation
Jump to search
| Line 63: | Line 63: | ||
| − | ==== Deposition uniformity ==== | + | ==== Deposition uniformity example ==== |
HfO2 film uniformity deposited on 12/06/2022, process details in the table above | HfO2 film uniformity deposited on 12/06/2022, process details in the table above | ||
[[Image:600cyc .4 sec 8 sec dec 6 2022.png|left|500px]] | [[Image:600cyc .4 sec 8 sec dec 6 2022.png|left|500px]] | ||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
== Resources == | == Resources == | ||
Revision as of 10:01, 6 December 2022
 |
|
| Tool Name | Cambridge Nanotech S200 ALD |
|---|---|
| Instrument Type | Deposition |
| Staff Manager | Sam Azadi |
| Lab Location | Bay 1 |
| Tool Manufacturer | Ultratech/Cambridge |
| Tool Model | S200 |
| NEMO Designation | {{{NEMO_Designation}}} |
| Lab Phone | 215-898-9736 |
| SOP Link | QNF SOP |
Description
The QNF Savannah ALD is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1.
The QNF Savannah ALD is capable of holding substrates of different sizes (up to 200mm). The system is equipped with six precursor lines for deposition of Al2O3, HfO2, TiO2, and SiO2.
Applications
- Aluminum oxide deposition
- Silicon dioxide deposition
- Titanium oxide deposition
- Hafnium oxide deposition
- Deposition of other films can be made available upon request
Allowed material in ALD System
- Si, SixNy, SiO2, SOI
- Hard masks compatible with process temperature
Process Data
Standard Processes
| Material Name | Precursor 1 | Precursor 2 | Dep. temperature [C] | Carrier flow [sccm] | Dep. rate [A/cyc] | Date [MM/DD/YY] | ||||
|---|---|---|---|---|---|---|---|---|---|---|
| Name | Pulse time [s] | Wait time [s] | Name | Pulse time [s] | Wait time [s] | |||||
| Al2O3 | TMA | 0.015 | 5 | H2O | 0.015 | 5 | 200 | 20 | 1 | 09/24/22 |
| HfO2 | TDMAHf | 0.15 | 8 | H2O | 0.015 | 5 | 200 | 20 | 1.3 | 09/24/22 |
| HfO2 | TDMAHf | 0.4 | 8 | H2O | 0.015 | 8 | 150 | 20 | 1.3 | 12/06/22 |
| TiO2 | TDMATi | 0.4 | 10 | H2O | 0.015 | 5 | 250 | 20 | 0.4 | 05/02/22 |
Deposition Rate Monitoring
Deposition uniformity example
HfO2 film uniformity deposited on 12/06/2022, process details in the table above
