Difference between revisions of "Heidelberg DWL 66+ Laser Writer"
| Line 36: | Line 36: | ||
== Processes == | == Processes == | ||
| − | + | ''Last confirmed July 2025. Pneumatic mode not recommended for dry etch and smaller features due to focus issues -- currently working with Heidelberg service to address.'' | |
| − | |||
{| class="wikitable" style="vertical-align:bottom;" | {| class="wikitable" style="vertical-align:bottom;" | ||
|- | |- | ||
| Line 48: | Line 47: | ||
| -100 | | -100 | ||
| Pneumatic | | Pneumatic | ||
| − | | active problem, | + | | active problem, see note above |
|- | |- | ||
| 10mm | | 10mm | ||
| Line 58: | Line 57: | ||
| -100 | | -100 | ||
| Pneumatic | | Pneumatic | ||
| − | | active problem, | + | | active problem, see note above |
|- | |- | ||
| 2mm | | 2mm | ||
| Line 68: | Line 67: | ||
| -100 | | -100 | ||
| Pneumatic | | Pneumatic | ||
| − | | active problem, | + | | active problem, see note above |
|} | |} | ||
| + | The following exposure parameters may be used to expose photomasks (development in TMAH 0.26N for 60s). <em> </em> | ||
{| class="wikitable" style="vertical-align:bottom;" | {| class="wikitable" style="vertical-align:bottom;" | ||
|- | |- | ||
| Line 116: | Line 116: | ||
| − | The following exposure parameters may be used to direct write into S18xx resist on silicon (soft baked at 115C for 60s, development in TMAH 0.26N for 60s). | + | The following exposure parameters may be used to direct write into S18xx resist on silicon (soft baked at 115C for 60s, development in TMAH 0.26N for 60s). Due to the variability of resist thickness and the ideal profile for subsequent processes, it is always a good idea to check your resist thickness and run a dose test to confirm optimal parameters. |
{| class="wikitable" | {| class="wikitable" | ||
Revision as of 11:59, 21 July 2025
 |
|
| Tool Name | Heidelberg DWL 66+ Laser Writer |
|---|---|
| Instrument Type | Lithography |
| Staff Manager | Ana Cohen |
| Lab Location | Bay 4 |
| Tool Manufacturer | Heidelberg |
| Tool Model | DWL 66+ |
| NEMO Designation | LW-01 |
| Nearest Phone | 8-9799 |
| SOP Link | SOP |
Description
The fully automated DWL 66+ laser writing system is located inside an environment chamber for stable environment of the system with controlled laminar airflow and temperature stability. The chamber is situated on a granite base with air cushions for vibration isolation. The optical system includes highly reflective mirrors and acousto-optic modulators for real-time beam correction. The laser is 405nm wavelength (h-line).
Lens & Resolution
- 2 mm lens (optical autofocus): 600 nm
- 10 mm lens (pneumatic autofocus): 2 µm
- 40 mm lens (pneumatic autofocus): 10 µm
Applications
- Patterning of photomasks
- Direct laser writing on substrates, from 6" wafers down to 10mm x 10mm pieces
Allowed Materials
- Mask Plates -- available in the QNF Stockroom pre-coated with AZ1500 and IP3500
- Resists -- must be compatible with h-line exposure
Processes
Last confirmed July 2025. Pneumatic mode not recommended for dry etch and smaller features due to focus issues -- currently working with Heidelberg service to address.
| Write Head | Focus | Mode | Notes |
|---|---|---|---|
| 10mm | -100 | Pneumatic | active problem, see note above |
| 10mm | -70 | Optical | for >2um minimum |
| 2mm | -100 | Pneumatic | active problem, see note above |
| 2mm | +40 | Optical | for >600nm minimum |
| 40mm | -100 | Pneumatic | active problem, see note above |
The following exposure parameters may be used to expose photomasks (development in TMAH 0.26N for 60s).
| Mask | Write Head | Filter(s) | Laser Power | Intensity | Notes |
|---|---|---|---|---|---|
| AZ1500 | 10mm | 50% | 60 mW | 90 | |
| IP3500 | 10mm | NONE | 120 mW | 90 | for <3um |
| AZ1500 | 2mm | 12.5% + 25% | 60 mW | 80 | |
| IP3500 | 2mm | 12.5% + 50% | 60 mW | 80 | for <1um |
| AZ1500 | 40mm | NONE | 220 mW | 60 |
The following exposure parameters may be used to direct write into S18xx resist on silicon (soft baked at 115C for 60s, development in TMAH 0.26N for 60s). Due to the variability of resist thickness and the ideal profile for subsequent processes, it is always a good idea to check your resist thickness and run a dose test to confirm optimal parameters.
| Resist | Thickness/Spin Speed | Write Head | Filter(s) | Laser Power | Intensity |
|---|---|---|---|---|---|
| S1805 | 0.5um (3krpm) | 10mm | 50% | 60 mW | 70 |
| S1818 | 2.2um (3krpm) | 10mm | NONE | 130 mW | 100 |
S1818 at 3000rpm (2.2um thickness) with 10mm writehead [Feb 2024] 65mW, NO Filter, 70% intensity, + 20 focus 5um, 10um, 25um, and 50um line widths after 60s TMAH 0.26N development
