Difference between revisions of "Raith EBPG5200+ E-Beam Lithography System"
Jump to navigation
Jump to search
(Update SOP location) |
|||
| Line 13: | Line 13: | ||
| Iris_Designation = EBL-03 | | Iris_Designation = EBL-03 | ||
| Lab_Phone = 8-9799 | | Lab_Phone = 8-9799 | ||
| − | | SOP Link = [https://repository.upenn.edu/entities/publication/8cf0d00b-4111-444b-90d1-965b23691703] | + | | SOP Link = [https://repository.upenn.edu/entities/publication/8cf0d00b-4111-444b-90d1-965b23691703 SOP] |
}} | }} | ||
Revision as of 09:31, 3 January 2024
 |
|
| Tool Name | Raith EBPG5200+ EBL |
|---|---|
| Instrument Type | Lithography |
| Staff Manager | David Barth |
| Lab Location | Bay 4 |
| Tool Manufacturer | Raith |
| Tool Model | EBPG5200+ |
| NEMO Designation | {{{NEMO_Designation}}} |
| Lab Phone | 8-9799 |
| SOP Link | SOP |
Description
The Raith EBPG5200+ is an electron beam lithography tool capable of high resolution patterning at 100 kV. It has a 125 MHz pattern generator, a maximum current of 350 nA, and a 1 mm mainfield size. It has an automatic aperture changer, automatic and dynamic focus and stigmation, and automatic alignment. The EBPG can achieve linewidths <8nm with stitching and overlay accuracy better than 10nm.
Applications
- Large scale, high speed patterning of positive and negative e-beam resists with features from <10 nm to micron/mm scale
Allowed Materials
- Standard semiconductor materials
- Low vapor pressure metals
- Resists