Difference between revisions of "Oxford PlasmaLab 100 PECVD"
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Deposition rate: ~ 56 nm/min ± 3 nm/min | Deposition rate: ~ 56 nm/min ± 3 nm/min | ||
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=== Special process data - adjustable table temperature === | === Special process data - adjustable table temperature === | ||
Revision as of 14:42, 28 November 2022
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| Tool Name | Oxford PlasmaLab 100 PECVD |
|---|---|
| Instrument Type | Deposition |
| Staff Manager | Sam Azadi |
| Lab Location | Bay 1 |
| Tool Manufacturer | Oxford |
| Tool Model | PlasmaLab 100 |
| NEMO Designation | {{{NEMO_Designation}}} |
| Lab Phone | 215-898-9736 |
| SOP Link | QNF SOP |
Description
The QNF Oxford Instruments PlasmaLab System 100 Plasma Enhanced Chemical Vapor Deposition (PECVD) tool is used to deposit a variety of thin-film materials at relatively modest temperatures on a variety of substrate materials. The tool utilizes an RF generator to deposit thin films at temperatures lower than traditional chemical vapor deposition systems. The tool operates between 150 and 350 C.
Applications
- Silicon dioxide deposition
- Silicon nitride deposition
- Amorphous silicon deposition
Allowed material in PECVD System
- Si, SixNy, SiO2, SOI, SiC, GaN
- Al, Pt, Cr, W, Mo, Ti
- Hard masks compatible with process temperature
List of materials NOT allowed in the chamber
| Name | symbol | Melting Point [C] |
|---|---|---|
| Bismuth | Bi | 271 |
| Cadmium | Cd | 321 |
| Carbon | C | Subl. |
| Gallium | Ga | 30 |
| Gold | Au | 1062 |
| Indium | In | 157 |
| Lead | Pb | 328 |
| Lithium | Li | 179 |
| Selenium | Se | 217 |
| Sulfur | S | 115 |
| Tellurium | Te | 452 |
| Thallium | Tl | 302 |
| Tin | Sn | 232 |
| Zinc | Zn | 419 |
Process information
Standard process data - Table temperature fixed at 350 C
- SiO2
Recipe parameters: optimized process parameters are in the report under "Protocols and Reports" section
Recipe name on the tool: Test-SiO2
Deposition rate: ~ 286 nm/min ± 2 nm/min
- SiNx
Recipe parameters: optimized process parameters are in the report under "Protocols and Reports" section
Recipe name on the tool: Test-SiNx deposition
Deposition rate: ~ 45 nm/min ± 2 nm/min
- a-Si
Recipe parameters: optimized process parameters are in the report under "Protocols and Reports" section
Recipe name on the tool: a-Si
Deposition rate: ~ 56 nm/min ± 3 nm/min
Deposition Rate Monitoring
Special process data - adjustable table temperature
- SiO2
Recipe parameters: optimized process parameters are in the report under "Protocols and Reports" section - table temperature at 200 C
Recipe name on the tool: Test-SiO2
Deposition rate: ~ 230 nm/min ± 2 nm/min