Difference between revisions of "Heidelberg DWL 66+ Laser Writer"
| Line 37: | Line 37: | ||
== Processes == | == Processes == | ||
The following exposure parameters may be used to expose photomasks. <em> </em> | The following exposure parameters may be used to expose photomasks. <em> </em> | ||
| + | |||
| + | {| class="wikitable" style="vertical-align:bottom;" | ||
| + | |- | ||
| + | ! Write Head | ||
| + | ! Focus | ||
| + | ! Mode | ||
| + | ! Notes | ||
| + | |- | ||
| + | | 10mm | ||
| + | | -100 | ||
| + | | Pneumatic | ||
| + | | active problem, not currently recommended for <25um | ||
| + | |- | ||
| + | | 10mm | ||
| + | | -70 | ||
| + | | Optical | ||
| + | | for >2um minimum | ||
| + | |- | ||
| + | | 2mm | ||
| + | | -100 | ||
| + | | Pneumatic | ||
| + | | active problem, not currently recommended | ||
| + | |- | ||
| + | | 2mm | ||
| + | | +40 | ||
| + | | Optical | ||
| + | | for >600nm minimum | ||
| + | |- | ||
| + | | 40mm | ||
| + | | -100 | ||
| + | | Pneumatic | ||
| + | | active problem, not currently recommended | ||
| + | |} | ||
| + | |||
| + | |||
{| class="wikitable" style="vertical-align:bottom;" | {| class="wikitable" style="vertical-align:bottom;" | ||
|- | |- | ||
| Line 44: | Line 79: | ||
! Laser Power | ! Laser Power | ||
! Intensity | ! Intensity | ||
| − | ! | + | ! Notes |
| − | |||
| − | |||
|- | |- | ||
| AZ1500 | | AZ1500 | ||
| Line 53: | Line 86: | ||
| 60 mW | | 60 mW | ||
| 90 | | 90 | ||
| − | | | + | | |
| − | |||
| − | |||
|- | |- | ||
| IP3500 | | IP3500 | ||
| Line 62: | Line 93: | ||
| 120 mW | | 120 mW | ||
| 90 | | 90 | ||
| − | | | + | | for <3um |
| − | |||
| − | |||
|- | |- | ||
| AZ1500 | | AZ1500 | ||
| Line 71: | Line 100: | ||
| 60 mW | | 60 mW | ||
| 80 | | 80 | ||
| − | |||
| − | |||
| − | |||
|- | |- | ||
| IP3500 | | IP3500 | ||
| Line 80: | Line 106: | ||
| 60 mW | | 60 mW | ||
| 80 | | 80 | ||
| − | | | + | | for <1um |
| − | |||
| − | |||
|- | |- | ||
| AZ1500 | | AZ1500 | ||
| Line 89: | Line 113: | ||
| 220 mW | | 220 mW | ||
| 60 | | 60 | ||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
|} | |} | ||
| Line 114: | Line 126: | ||
! Laser Power | ! Laser Power | ||
! Intensity | ! Intensity | ||
| − | |||
| − | |||
|- | |- | ||
| S1805 | | S1805 | ||
| Line 123: | Line 133: | ||
| 60 mW | | 60 mW | ||
| 70 | | 70 | ||
| − | |||
| − | |||
|- | |- | ||
| S1818 | | S1818 | ||
| Line 132: | Line 140: | ||
| 130 mW | | 130 mW | ||
| 100 | | 100 | ||
| − | |||
| − | |||
|} | |} | ||
Revision as of 15:36, 17 July 2025
 |
|
| Tool Name | Heidelberg DWL 66+ Laser Writer |
|---|---|
| Instrument Type | Lithography |
| Staff Manager | Ana Cohen |
| Lab Location | Bay 4 |
| Tool Manufacturer | Heidelberg |
| Tool Model | DWL 66+ |
| NEMO Designation | LW-01 |
| Nearest Phone | 8-9799 |
| SOP Link | SOP |
Description
The fully automated DWL 66+ laser writing system is located inside an environment chamber for stable environment of the system with controlled laminar airflow and temperature stability. The chamber is situated on a granite base with air cushions for vibration isolation. The optical system includes highly reflective mirrors and acousto-optic modulators for real-time beam correction. The laser is 405nm wavelength (h-line).
Lens & Resolution
- 2 mm lens (optical autofocus): 600 nm
- 10 mm lens (pneumatic autofocus): 2 µm
- 40 mm lens (pneumatic autofocus): 10 µm
Applications
- Patterning of photomasks
- Direct laser writing on substrates, from 6" wafers down to 10mm x 10mm pieces
Allowed Materials
- Mask Plates -- available in the QNF Stockroom pre-coated with AZ1500 and IP3500
- Resists -- must be compatible with h-line exposure
Processes
The following exposure parameters may be used to expose photomasks.
| Write Head | Focus | Mode | Notes |
|---|---|---|---|
| 10mm | -100 | Pneumatic | active problem, not currently recommended for <25um |
| 10mm | -70 | Optical | for >2um minimum |
| 2mm | -100 | Pneumatic | active problem, not currently recommended |
| 2mm | +40 | Optical | for >600nm minimum |
| 40mm | -100 | Pneumatic | active problem, not currently recommended |
| Resist | Write Head | Filter(s) | Laser Power | Intensity | Notes |
|---|---|---|---|---|---|
| AZ1500 | 10mm | 50% | 60 mW | 90 | |
| IP3500 | 10mm | NONE | 120 mW | 90 | for <3um |
| AZ1500 | 2mm | 12.5% + 25% | 60 mW | 80 | |
| IP3500 | 2mm | 12.5% + 50% | 60 mW | 80 | for <1um |
| AZ1500 | 40mm | NONE | 220 mW | 60 |
The following exposure parameters may be used to direct write into S18xx resist on silicon (soft baked at 115C for 60s, development in TMAH 0.26N for 60s). For the optimum focus, please refer to the "AZ1500.txt" or "IP3500.txt" files for the optimum value to use. [May not be up-to-date. It is always a good idea to check your resist thickness and run a dose test to confirm optimal parameters.]
| Resist | Thickness/Spin Speed | Write Head | Filter(s) | Laser Power | Intensity |
|---|---|---|---|---|---|
| S1805 | 0.5um (3krpm) | 10mm | 50% | 60 mW | 70 |
| S1818 | 2.2um (3krpm) | 10mm | NONE | 130 mW | 100 |
S1818 at 3000rpm (2.2um thickness) with 10mm writehead [Feb 2024] 65mW, NO Filter, 70% intensity, + 20 focus 5um, 10um, 25um, and 50um line widths after 60s TMAH 0.26N development
