Difference between revisions of "Heidelberg DWL 66+ Laser Writer"
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== Processes == | == Processes == | ||
| − | The following exposure parameters may be used to expose photomasks. | + | The following exposure parameters may be used to expose photomasks. (Updated Feb 15, 2024) |
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| 25% | | 25% | ||
| 60 | | 60 | ||
| − | | | + | | 70% |
| − | | | + | | +20 |
| 1 | | 1 | ||
| Pneumatic | | Pneumatic | ||
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| IP3500 | | IP3500 | ||
| 10mm | | 10mm | ||
| − | | | + | | NONE |
| 60 | | 60 | ||
| − | | | + | | 70% |
| − | | | + | | +20 |
| 1 | | 1 | ||
| Pneumatic | | Pneumatic | ||
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| − | The following exposure parameters may be used to direct write into S1800 resist (soft baked at 115C for 1 minute) on silicon. For the optimum focus, please refer to the "AZ1500.txt" or "IP3500.txt" files for the optimum value to use. | + | The following exposure parameters may be used to direct write into S1800 resist (soft baked at 115C for 1 minute) on silicon. For the optimum focus, please refer to the "AZ1500.txt" or "IP3500.txt" files for the optimum value to use. [May not be up-to-date. It is always a good idea to check your resist thickness and run a dose test to confirm optimal parameters.] |
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Revision as of 17:18, 15 February 2024
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| Tool Name | Heidelberg DWL 66+ Laser Writer |
|---|---|
| Instrument Type | Lithography |
| Staff Manager | Ana Cohen |
| Lab Location | Bay 2 |
| Tool Manufacturer | Heidelberg |
| Tool Model | DWL 66+ |
| NEMO Designation | LW-01 |
| Lab Phone | 8-9799 |
| SOP Link | SOP |
Description
The fully automated DWL 66+ laser writing system is located inside an environment chamber for stable environment of the system with controlled laminar airflow and temperature stability. The chamber is situated on a granite base with air cushions for vibration isolation. The optical system includes highly reflective mirrors and acousto-optic modulators for real-time beam correction.
Lens & Resolution
- 2 mm lens (optical autofocus): 600 nm
- 10 mm lens (pneumatic autofocus): 2 µm
- 40 mm lens (pneumatic autofocus): 10 µm
Applications
- Patterning of photomasks
- Direct laser writing of patterns
Processes
The following exposure parameters may be used to expose photomasks. (Updated Feb 15, 2024)
| Resist | Write Head | Filter(s) | Laser Power (mW) | Intensity | Focus | # of passes | Focus mode |
|---|---|---|---|---|---|---|---|
| AZ1500 | 10mm | 25% | 60 | 70% | +20 | 1 | Pneumatic |
| IP3500 | 10mm | NONE | 60 | 70% | +20 | 1 | Pneumatic |
| IP3500 | 2mm | 25% & 12.5% | 60 | 50% | 0 | 1 | Pneumatic |
The following exposure parameters may be used to direct write into S1800 resist (soft baked at 115C for 1 minute) on silicon. For the optimum focus, please refer to the "AZ1500.txt" or "IP3500.txt" files for the optimum value to use. [May not be up-to-date. It is always a good idea to check your resist thickness and run a dose test to confirm optimal parameters.]
| Resist | Spin Speed (RPM) | Write Head | Filter(s) | Laser Power (mW) | Intensity | # passes | Focus mode |
|---|---|---|---|---|---|---|---|
| S1805 | 3000 | 10mm | 25% | 35 | 60% | 1 | pneumatic |
| S1805 | 3000 | 2mm | 1% & 50% | 105 | 100% | 1 | pneumatic |
| KL5315 | 5000 | 10mm | 50% | 35 | 70% | 1 | pneumatic |
| KL5315 | 5000 | 2mm | 1% | 75 | 100% | 1 | pneumatic |
| S1818 | 3000 | 10mm | 50% | 65 | 80% | 1 | pneumatic |
| S1818 | 3000 | 2mm | 12.5% & 25% | 60 | 60% | 1 | pneumatic |