Difference between revisions of "Cambridge Nanotech S200 ALD"
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| + | ! rowspan=2 |Material Name | ||
| + | ! colspan=3 |Precursor 1 | ||
| + | ! colspan =3 |Precursor 2 | ||
| + | ! rowspan=2 |Dep. temperature [C] | ||
| + | !rowspan=2 | Carrier flow [sccm] | ||
| + | !rowspan=2 | Dep. rate [A/cyc] | ||
| + | !rowspan=2 |Date [MM/DD/YY] | ||
| + | |- | ||
| + | ! Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open || Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open | ||
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| + | | SiO<sub>2</sub> || BDEAS || 0.2 || 5 SV closed/ 8 SV open || O<sub>3</sub> || 0.015 || 5 SV closed/ 8 SV open || 200 || 20 || 0.56 || 06/16/23 | ||
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==== Deposition Rate Monitoring ==== | ==== Deposition Rate Monitoring ==== | ||
Revision as of 08:25, 16 June 2023
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| Tool Name | Cambridge Nanotech S200 ALD |
|---|---|
| Instrument Type | Deposition |
| Staff Manager | Sam Azadi |
| Lab Location | Bay 1 |
| Tool Manufacturer | Ultratech/Cambridge |
| Tool Model | S200 |
| NEMO Designation | {{{NEMO_Designation}}} |
| Lab Phone | 215-898-9736 |
| SOP Link | QNF SOP |
Description
The QNF Savannah ALD is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1.
The QNF Savannah ALD is capable of holding substrates of different sizes (up to 200mm). The system is equipped with six precursor lines for deposition of Al2O3, HfO2, and TiO2.
Applications
- Aluminum oxide deposition
- Titanium oxide deposition
- Hafnium oxide deposition
- Deposition of other films can be made available upon request
Allowed material in ALD System
- Si, SixNy, SiO2, SOI
- Hard masks compatible with process temperature
Process Data
Standard Processes
- Water based depositions
| Material Name | Precursor 1 | Precursor 2 | Dep. temperature [C] | Carrier flow [sccm] | Dep. rate [A/cyc] | Date [MM/DD/YY] | ||||
|---|---|---|---|---|---|---|---|---|---|---|
| Name | Pulse time [s] | Wait time [s] | Name | Pulse time [s] | Wait time [s] | |||||
| Al2O3 | TMA | 0.015 | 5 | H2O | 0.015 | 5 | 245 | 20 | 1 | 03/20/23 |
| Al2O3 | TMA | 0.015 | 5 | H2O | 0.015 | 5 | 200 | 20 | 1 | 09/24/22 |
| Al2O3 | TMA | 0.020 | 5 | H2O | 0.020 | 5 | 150 | 20 | 1 | 05/09/23 |
| HfO2 | TDMAHf | 0.15 | 8 | H2O | 0.015 | 5 | 200 | 20 | 1.3 | 09/24/22 |
| HfO2 | TDMAHf | 0.3 | 10 | H2O | 0.015 | 8 | 150 | 20 | 1.3 | 04/25/23 |
| TiO2 | TDMATi | 0.4 | 10 | H2O | 0.015 | 5 | 250 | 20 | 0.4 | 05/02/22 |
| TiO2 | TDMATi | 0.3 | 10 | H2O | 0.015 | 10 | 150 | 20 | 0.5 | 02/17/23 |
| Material Name | Precursor 1 | Precursor 2 | Dep. temperature [C] | Carrier flow [sccm] | Dep. rate [A/cyc] | Date [MM/DD/YY] | ||||
|---|---|---|---|---|---|---|---|---|---|---|
| Name | Pulse time [s] | Wait time [s] : Stop Valve closed / open | Name | Pulse time [s] | Wait time [s] : Stop Valve closed / open | |||||
| SiO2 | BDEAS | 0.2 | 5 SV closed/ 8 SV open | O3 | 0.015 | 5 SV closed/ 8 SV open | 200 | 20 | 0.56 | 06/16/23 |
Deposition Rate Monitoring
