Difference between revisions of "Heidelberg DWL 66+ Laser Writer"

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| name = Heidelberg DWL 66+ Laser Writer
 
| name = Heidelberg DWL 66+ Laser Writer
 
| Tool_Name = Heidelberg DWL 66+ Laser Writer
 
| Tool_Name = Heidelberg DWL 66+ Laser Writer
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| image = [[Image:LW-01.jpeg|300px]]
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| image = [[Image:LW-01.jpeg|250px]]
 
| imagecaption =  
 
| imagecaption =  
 
| Instrument_Type = Lithography
 
| Instrument_Type = Lithography
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== Description ==
 
== Description ==
−
The fully automated DWL 66+ laser writing system is located inside an environment chamber for stable environment of the system with controlled laminar airflow and temperature stability. The chamber is situated on a granite base with air cushions for vibration isolation. The optical system includes highly reflective mirrors and acousto-optic modulators for real-time beam correction. The laser is 405nm wavelength (h-line).  
+
The fully automated DWL 66+ laser writing system has both binary (2D) and grayscale (2.5D) exposure capability.
 +
[[File: DWL schematic.PNG|thumb|right|upright=0.75|Schematic of pattern exposure with the DWL66+, [https://heidelberg-instruments.com/wp-content/uploads/2025/05/The-Lithographer-Surface-Issue.pdf TheLithographer.com, Surface Issue, May 2025] ]]
 +
The pattern is broken into vertical stripes of ~500px with preset overlap. To write each stripe, the tool modulates and deflects the laser beam based on the provided pattern data while the stage moves along Y. This process repeats along the X direction until the pattern is complete.
  
−
'''Lens & Resolution'''
+
== Allowed Materials ==
−
* 2 mm lens (optical autofocus): 600 nm
+
Substrates
−
* 10 mm lens (pneumatic autofocus): 2 µm
 
−
* 40 mm lens (pneumatic autofocus): 10 µm
 
−
 
 
−
===== Applications =====
 
−
* [https://nemo.nano.upenn.edu/media/tool_documents/lw-01-heidelberg-dwl66/How_to_Make_a_Mask_At_QNF_v06.pdf Patterning of photomasks]
 
−
* Direct laser writing on substrates, from 6" wafers down to 10mm x 10mm pieces
 
−
 
 
−
===== Allowed Materials =====
 
 
* Mask Plates -- available in the [https://nemo.nano.upenn.edu/stockroom/ QNF Stockroom] pre-coated with AZ1500 and IP3500
 
* Mask Plates -- available in the [https://nemo.nano.upenn.edu/stockroom/ QNF Stockroom] pre-coated with AZ1500 and IP3500
−
* Resists -- must be compatible with h-line exposure
+
* 4" wafers
−
** [[Resists_at_QNF#QNF_Supplied_Standard_Photoresists | S1800 series]]
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* Pieceparts > 20mm x 20mm ''(Starting Aug 2025, DMO system is recommended for small piece part direct write)
−
** [[Resists_at_QNF#Miscellaneous | KL5300 series]]
+
Resists -- must be compatible with h-line/ 405nm exposure ''(Laser exchanged in June 2023. Previous documentation may include 365nm capability.)''
−
** [[Resists_at_QNF#Other_Resists | LOR]]
+
* [[Resists_at_QNF#QNF_Supplied_Standard_Photoresists | S1800 series]]
 +
* [[Resists_at_QNF#Miscellaneous | KL5300 series]]
 +
* [[Resists_at_QNF#Other_Resists | LOR]]
  
 
== Processes ==
 
== Processes ==
−
The following exposure parameters may be used to expose photomasks. <em>  </em>
+
=== Writehead Selection ===
−
 
+
''Pneumatic mode not recommended for dry etch and smaller features due to focus issues -- currently working with Heidelberg service to address. </br> Last confirmed July 2025.''
 
{| class="wikitable" style="vertical-align:bottom;"
 
{| class="wikitable" style="vertical-align:bottom;"
 
|-
 
|-
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| -100
 
| -100
 
| Pneumatic
 
| Pneumatic
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| active problem, not currently recommended for <25um
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| active problem, see note above
 
|-
 
|-
 
| 10mm
 
| 10mm
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| -100
 
| -100
 
| Pneumatic
 
| Pneumatic
−
| active problem, not currently recommended
+
| active problem, see note above
 
|-
 
|-
 
| 2mm
 
| 2mm
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| -100
 
| -100
 
| Pneumatic
 
| Pneumatic
−
| active problem, not currently recommended
+
| active problem, see note above <!-- 10um minimum -->
 
|}
 
|}
  
−
 
+
===Exposure Parameters===
 +
=====Mask Plates=====
 +
[[File: 10mm n70opt 4.jpg|thumb|right|upright=0.75| 2um lines on AZ1500 using 10mm with optical focus (June 2025)]]
 +
''500nm resist thickness on chrome-coated soda lime. Development in TMAH 0.26N for 60s. </br> Last confirmed July 2025.''  <em>  </em>
 
{| class="wikitable" style="vertical-align:bottom;"
 
{| class="wikitable" style="vertical-align:bottom;"
 
|-
 
|-
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|}
 
|}
  
−
 
+
=====Other direct writes=====
−
The following exposure parameters may be used to direct write into S18xx resist on silicon (soft baked at 115C for 60s, development in TMAH 0.26N for 60s). For the optimum focus, please refer to the "AZ1500.txt" or "IP3500.txt" files for the optimum value to use. [May not be up-to-date. It is always a good idea to check your resist thickness and run a dose test to confirm optimal parameters.]
+
[[File: LW-01 S1818Lines 25um Feb2024.png|thumb|right|upright=0.75| 5um, 10um, 25um, and 50um lines using 10mm writehead on 2um S1818 (Feb 2024)]]
−
 
+
''Resist on 4" silicon wafer, soft baked at 115C for 60s, development in TMAH 0.26N for 60s. </br> Due to the variability of resist thickness, substrate reflectivity, and the ideal profile for subsequent processes, a dose test is always recommended to confirm optimal parameters.''
 
{| class="wikitable"  
 
{| class="wikitable"  
 
|-
 
|-
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|}
 
|}
  
−
 
−
 
 
−
  [[File:LW-01 S1818Lines 25um Feb2024.png|400px|]] [[File:LW-01 S1818Lines 5um Feb2024.png|400px|]]
 
−
  S1818 at 3000rpm (2.2um thickness) with 10mm writehead [Feb 2024]
 
−
  65mW, NO Filter, 70% intensity, + 20 focus
 
−
  5um, 10um, 25um, and 50um line widths after 60s TMAH 0.26N development
 
  
 
== Resources ==
 
== Resources ==
−
 
+
===== SOPs =====
−
* [https://nemo.nano.upenn.edu/media/tool_documents/lw-01-heidelberg-dwl66/How_to_Make_a_Mask_At_QNF_v05.pdf How to Make a Mask at QNF]
 
−
* [https://www.youtube.com/playlist?list=PLiihbHV9HgpWZikttBFUh2O8EGUsRu348 Videos - BEAMER Training for LW-01]
 
−
 
 
−
===== SOPs & Troubleshooting =====
 
 
* [https://nemo.nano.upenn.edu/media/tool_documents/lw-01-heidelberg-dwl66/LW-01_SOP_v02.pdf SOP]
 
* [https://nemo.nano.upenn.edu/media/tool_documents/lw-01-heidelberg-dwl66/LW-01_SOP_v02.pdf SOP]
 
* [https://www.youtube.com/watch?v=q_mvEGSCEGI&list=PLiihbHV9HgpWAcmgdpMGBkejcBhEzoKJO Videos - LW-01 Tool Training]
 
* [https://www.youtube.com/watch?v=q_mvEGSCEGI&list=PLiihbHV9HgpWAcmgdpMGBkejcBhEzoKJO Videos - LW-01 Tool Training]
 
* [https://drive.google.com/file/d/1MUMPdLl4GfXtmg3gJjdiPKbdiyCq-elM/view?usp=drive_link Video - Chuck Installation/Removal]
 
* [https://drive.google.com/file/d/1MUMPdLl4GfXtmg3gJjdiPKbdiyCq-elM/view?usp=drive_link Video - Chuck Installation/Removal]
  
−
===== For Staff Only =====
+
=====Mask Making=====
 +
* [https://nemo.nano.upenn.edu/media/tool_documents/lw-01-heidelberg-dwl66/How_to_Make_a_Mask_At_QNF_v05.pdf How to Make a Mask at QNF]
 +
* [https://rise.articulate.com/share/A8k76vtz0l6qxlA2gDZcYHPmJl5bB2C0#/ Introduction to KLayout (LNF)]
 +
* [https://www.youtube.com/playlist?list=PLiihbHV9HgpWZikttBFUh2O8EGUsRu348 BEAMER Training for LW-01]
  
 +
=====Troubleshooting =====
 
* [https://upenn.box.com/s/9kc3fz6gktrrrlac4e0drmzwjzwmufxl Power Up Instructions]
 
* [https://upenn.box.com/s/9kc3fz6gktrrrlac4e0drmzwjzwmufxl Power Up Instructions]
 +
 +
=====References=====
 +
* [https://heidelberg-instruments.com/product/dwl-66/ Heidelberg Instruments]

Latest revision as of 14:48, 25 July 2025


Heidelberg DWL 66+ Laser Writer
LW-01.jpeg
Tool Name Heidelberg DWL 66+ Laser Writer
Instrument Type Lithography
Staff Manager Ana Cohen
Lab Location Bay 4
Tool Manufacturer Heidelberg
Tool Model DWL 66+
NEMO Designation LW-01
Nearest Phone 8-9799
SOP Link SOP

Description

The fully automated DWL 66+ laser writing system has both binary (2D) and grayscale (2.5D) exposure capability.

Schematic of pattern exposure with the DWL66+, TheLithographer.com, Surface Issue, May 2025

The pattern is broken into vertical stripes of ~500px with preset overlap. To write each stripe, the tool modulates and deflects the laser beam based on the provided pattern data while the stage moves along Y. This process repeats along the X direction until the pattern is complete.

Allowed Materials

Substrates

  • Mask Plates -- available in the QNF Stockroom pre-coated with AZ1500 and IP3500
  • 4" wafers
  • Pieceparts > 20mm x 20mm (Starting Aug 2025, DMO system is recommended for small piece part direct write)

Resists -- must be compatible with h-line/ 405nm exposure (Laser exchanged in June 2023. Previous documentation may include 365nm capability.)

Processes

Writehead Selection

Pneumatic mode not recommended for dry etch and smaller features due to focus issues -- currently working with Heidelberg service to address.
Last confirmed July 2025.

Write Head Focus Mode Notes
10mm -100 Pneumatic active problem, see note above
10mm -70 Optical for >2um minimum
2mm -100 Pneumatic active problem, see note above
2mm +40 Optical for >600nm minimum
40mm -100 Pneumatic active problem, see note above

Exposure Parameters

Mask Plates
2um lines on AZ1500 using 10mm with optical focus (June 2025)

500nm resist thickness on chrome-coated soda lime. Development in TMAH 0.26N for 60s.
Last confirmed July 2025.

Mask Write Head Filter(s) Laser Power Intensity Notes
AZ1500 10mm 50% 60 mW 90
IP3500 10mm NONE 120 mW 90 for <3um
AZ1500 2mm 12.5% + 25% 60 mW 80
IP3500 2mm 12.5% + 50% 60 mW 80 for <1um
AZ1500 40mm NONE 220 mW 60
Other direct writes
5um, 10um, 25um, and 50um lines using 10mm writehead on 2um S1818 (Feb 2024)

Resist on 4" silicon wafer, soft baked at 115C for 60s, development in TMAH 0.26N for 60s.
Due to the variability of resist thickness, substrate reflectivity, and the ideal profile for subsequent processes, a dose test is always recommended to confirm optimal parameters.

Resist Thickness/Spin Speed Write Head Filter(s) Laser Power Intensity
S1805 0.5um (3krpm) 10mm 50% 60 mW 70
S1818 2.2um (3krpm) 10mm NONE 130 mW 100


Resources

SOPs
Mask Making
Troubleshooting
References
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