Difference between revisions of "Heidelberg DWL 66+ Laser Writer"

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(Created page with "Category:Lithography {{EquipmentInfo | name = Heidelberg DWL 66+ Laser Writer | Tool_Name = Heidelberg DWL 66+ Laser Writer | image = 300px | imageca...")
 
 
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| imagecaption =  
 
| imagecaption =  
 
| Instrument_Type = Lithography
 
| Instrument_Type = Lithography
−
| Staff_Manager = David Barth
+
| Staff_Manager = [[Ana Cohen | Ana Cohen]]
−
| Lab_Location = Bay 2
+
| Lab_Location = Bay 4
 
| Tool_Manufacturer = Heidelberg  
 
| Tool_Manufacturer = Heidelberg  
 
| Tool_Model = DWL 66+
 
| Tool_Model = DWL 66+
−
| Iris_Designation = LW-01
+
| NEMO_Designation = LW-01
−
| Lab_Phone = XXXXX
+
| Lab_Phone = 8-9799
−
| SOP Link = [https://www.seas.upenn.edu/~nanosop/Photomask_Writer.htm SOP]
+
| SOP Link = [https://nemo.nano.upenn.edu/media/tool_documents/lw-01-heidelberg-dwl66/LW-01_SOP_v02.pdf SOP]
 
}}
 
}}
  
 
== Description ==
 
== Description ==
−
 
+
The fully automated DWL 66+ laser writing system is located inside an environment chamber for stable environment of the system with controlled laminar airflow and temperature stability. The chamber is situated on a granite base with air cushions for vibration isolation. The optical system includes highly reflective mirrors and acousto-optic modulators for real-time beam correction. The laser is 405nm wavelength (h-line).
  
 
'''Lens & Resolution'''
 
'''Lens & Resolution'''
Line 24: Line 24:
 
* 40 mm lens (pneumatic autofocus): 10 µm
 
* 40 mm lens (pneumatic autofocus): 10 µm
  
 +
===== Applications =====
 +
* [https://nemo.nano.upenn.edu/media/tool_documents/lw-01-heidelberg-dwl66/How_to_Make_a_Mask_At_QNF_v05.pdf Patterning of photomasks]
 +
* Direct laser writing on substrates, from 6" wafers down to 10mm x 10mm pieces
 +
 +
===== Allowed Materials =====
 +
* Mask Plates -- available in the [https://nemo.nano.upenn.edu/stockroom/ QNF Stockroom] pre-coated with AZ1500 and IP3500
 +
* Resists -- must be compatible with h-line exposure
 +
** [[Resists_at_QNF#QNF_Supplied_Standard_Photoresists | S1800 series]]
 +
** [[Resists_at_QNF#Miscellaneous | KL5300 series]]
 +
** [[Resists_at_QNF#Other_Resists | LOR]]
 +
 +
== Processes ==
 +
The following exposure parameters may be used to expose photomasks. <em>  </em>
 +
{| class="wikitable" style="vertical-align:bottom;"
 +
|-
 +
! Resist
 +
! Write Head
 +
! Filter(s)
 +
! Laser Power (mW)
 +
! Intensity
 +
! Focus
 +
! # of passes
 +
! Focus mode
 +
|-
 +
| AZ1500
 +
| 10mm
 +
| 25%
 +
| 70
 +
| 50%
 +
| -30
 +
| 1
 +
| Pneumatic
 +
|-
 +
| IP3500
 +
| 10mm
 +
| NONE
 +
| 70
 +
| 50%
 +
| -30
 +
| 1
 +
| Pneumatic
 +
|-
 +
| AZ1500
 +
| 2mm
 +
| 12.5%+25%+50%
 +
| 60
 +
| 50%
 +
| -15
 +
| 1
 +
| Pneumatic
 +
|-
 +
| IP3500
 +
| 2mm
 +
| 12.5%+25%
 +
| 60
 +
| 50%
 +
| -15
 +
| 1
 +
| Pneumatic
 +
|}
 +
 +
 +
The following exposure parameters may be used to direct write into S18xx resist on silicon (soft baked at 115C for 60s, development in TMAH 0.26N for 60s).  For the optimum focus, please refer to the "AZ1500.txt" or "IP3500.txt" files for the optimum value to use. [May not be up-to-date. It is always a good idea to check your resist thickness and run a dose test to confirm optimal parameters.]
 +
 +
{| class="wikitable"
 +
|-
 +
! Resist
 +
! Spin Speed (RPM)
 +
! Write Head
 +
! Filter(s)
 +
! Laser Power (mW)
 +
! Intensity
 +
! # passes
 +
! Focus mode
 +
|-
 +
| S1805
 +
| 3000
 +
| 10mm
 +
| 12.5%
 +
| 105
 +
| 60%
 +
| 1
 +
| pneumatic
 +
|-
 +
| S1805
 +
| 3000
 +
| 2mm
 +
| 1% & 50%
 +
| TBD
 +
| TBD
 +
| 1
 +
| pneumatic
 +
|-
 +
| KL5315
 +
| 5000
 +
| 10mm
 +
| 50%
 +
| TBD
 +
| TBD
 +
| 1
 +
| pneumatic
 +
|-
 +
| KL5315
 +
| 5000
 +
| 2mm
 +
| 1%
 +
| TBD
 +
| TBD
 +
| 1
 +
| pneumatic
 +
|-
 +
| S1818
 +
| 3000
 +
| 10mm
 +
| NONE
 +
| 65
 +
| 60%
 +
| 1
 +
| pneumatic
 +
|-
 +
| S1818
 +
| 3000
 +
| 2mm
 +
| 12.5% & 25%
 +
| TBD
 +
| TBD
 +
| 1
 +
| pneumatic
 +
|}
  
−
===== Applications =====
 
−
* Patterning of photomasks
 
−
* Direct laser writing of patterns
 
  
 +
 
 +
  [[File:LW-01 S1818Lines 25um Feb2024.png|400px|]] [[File:LW-01 S1818Lines 5um Feb2024.png|400px|]]
 +
  S1818 at 3000rpm (2.2um thickness) with 10mm writehead [Feb 2024]
 +
  65mW, NO Filter, 70% intensity, + 20 focus
 +
  5um, 10um, 25um, and 50um line widths after 60s TMAH 0.26N development
  
 
== Resources ==
 
== Resources ==
 +
 +
* [https://nemo.nano.upenn.edu/media/tool_documents/lw-01-heidelberg-dwl66/How_to_Make_a_Mask_At_QNF_v05.pdf How to Make a Mask at QNF]
 +
* [https://www.youtube.com/playlist?list=PLiihbHV9HgpWZikttBFUh2O8EGUsRu348 Videos - BEAMER Training for LW-01]
  
 
===== SOPs & Troubleshooting =====
 
===== SOPs & Troubleshooting =====
−
* [https://www.seas.upenn.edu/~nanosop/Photomask_Writer.htm QNF SOP]
+
* [https://nemo.nano.upenn.edu/media/tool_documents/lw-01-heidelberg-dwl66/LW-01_SOP_v02.pdf SOP]
 +
* [https://www.youtube.com/watch?v=q_mvEGSCEGI&list=PLiihbHV9HgpWAcmgdpMGBkejcBhEzoKJO Videos - LW-01 Tool Training]
 +
* [https://drive.google.com/file/d/1MUMPdLl4GfXtmg3gJjdiPKbdiyCq-elM/view?usp=drive_link Video - Chuck Installation/Removal]

Latest revision as of 18:41, 28 October 2024


Heidelberg DWL 66+ Laser Writer
LW-01.jpeg
Tool Name Heidelberg DWL 66+ Laser Writer
Instrument Type Lithography
Staff Manager Ana Cohen
Lab Location Bay 4
Tool Manufacturer Heidelberg
Tool Model DWL 66+
NEMO Designation LW-01
Lab Phone 8-9799
SOP Link SOP

Description

The fully automated DWL 66+ laser writing system is located inside an environment chamber for stable environment of the system with controlled laminar airflow and temperature stability. The chamber is situated on a granite base with air cushions for vibration isolation. The optical system includes highly reflective mirrors and acousto-optic modulators for real-time beam correction. The laser is 405nm wavelength (h-line).

Lens & Resolution

  • 2 mm lens (optical autofocus): 600 nm
  • 10 mm lens (pneumatic autofocus): 2 µm
  • 40 mm lens (pneumatic autofocus): 10 µm
Applications
Allowed Materials

Processes

The following exposure parameters may be used to expose photomasks.

Resist Write Head Filter(s) Laser Power (mW) Intensity Focus # of passes Focus mode
AZ1500 10mm 25% 70 50% -30 1 Pneumatic
IP3500 10mm NONE 70 50% -30 1 Pneumatic
AZ1500 2mm 12.5%+25%+50% 60 50% -15 1 Pneumatic
IP3500 2mm 12.5%+25% 60 50% -15 1 Pneumatic


The following exposure parameters may be used to direct write into S18xx resist on silicon (soft baked at 115C for 60s, development in TMAH 0.26N for 60s). For the optimum focus, please refer to the "AZ1500.txt" or "IP3500.txt" files for the optimum value to use. [May not be up-to-date. It is always a good idea to check your resist thickness and run a dose test to confirm optimal parameters.]

Resist Spin Speed (RPM) Write Head Filter(s) Laser Power (mW) Intensity # passes Focus mode
S1805 3000 10mm 12.5% 105 60% 1 pneumatic
S1805 3000 2mm 1% & 50% TBD TBD 1 pneumatic
KL5315 5000 10mm 50% TBD TBD 1 pneumatic
KL5315 5000 2mm 1% TBD TBD 1 pneumatic
S1818 3000 10mm NONE 65 60% 1 pneumatic
S1818 3000 2mm 12.5% & 25% TBD TBD 1 pneumatic 


 LW-01 S1818Lines 25um Feb2024.png LW-01 S1818Lines 5um Feb2024.png
 S1818 at 3000rpm (2.2um thickness) with 10mm writehead [Feb 2024]
 65mW, NO Filter, 70% intensity, + 20 focus
 5um, 10um, 25um, and 50um line widths after 60s TMAH 0.26N development

Resources

SOPs & Troubleshooting
Retrieved from "https://wiki.nano.upenn.edu/wiki/index.php?title=Heidelberg_DWL_66%2B_Laser_Writer&oldid=2093"