Difference between revisions of "RTA-01"
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| name = AET Thermal RX | | name = AET Thermal RX | ||
| Tool_Name = Rapid Thermal Annealer - 01 | | Tool_Name = Rapid Thermal Annealer - 01 | ||
| − | | image = [[Image: | + | | image = [[Image:RTA01.jpg|300px]] |
| imagecaption = | | imagecaption = | ||
| − | | Instrument_Type = | + | | Instrument_Type = Thermal Processing |
| Staff_Manager = [[Lucas Barreto | Lucas Barreto]] | | Staff_Manager = [[Lucas Barreto | Lucas Barreto]] | ||
| − | | Lab_Location = Bay | + | | Lab_Location = Bay 1 |
| Tool_Manufacturer = AET | | Tool_Manufacturer = AET | ||
| Tool_Model = Thermal RX | | Tool_Model = Thermal RX | ||
| NEMO_Designation = RTA-01 | | NEMO_Designation = RTA-01 | ||
| Lab_Phone = 215-898-9736 | | Lab_Phone = 215-898-9736 | ||
| − | |||
}} | }} | ||
== Description == | == Description == | ||
| − | The Rapid Thermal Annealer-01 anneals the sample up to 1200° C. The processes can be run under atmospheric pressure in Oxygen, Nitrogen, Forming Gas, and Argon environments. The tool can hold 4’’ wafers or smaller chips. Only MOS-compatible materials are allowed. Compound semiconductors and metals are not allowed. | + | The Rapid Thermal Annealer-01 anneals the sample up to 1200° C. The processes can be run under atmospheric pressure in Oxygen, Nitrogen, Forming Gas, and Argon environments. The tool can hold 4’’ wafers or smaller chips. Only MOS-compatible materials are allowed. Compound semiconductors and metals are not allowed. |
| − | |||
| − | |||
== Resources == | == Resources == | ||
| + | ===== SOP ===== | ||
| + | <pdf height="800"> File:RTA01_SOP_20240909.pdf</pdf> | ||
Latest revision as of 13:44, 9 September 2024
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| Tool Name | Rapid Thermal Annealer - 01 |
|---|---|
| Instrument Type | Thermal Processing |
| Staff Manager | Lucas Barreto |
| Lab Location | Bay 1 |
| Tool Manufacturer | AET |
| Tool Model | Thermal RX |
| NEMO Designation | RTA-01 |
| Lab Phone | 215-898-9736 |
| SOP Link | {{{SOP Link}}} |
Description
The Rapid Thermal Annealer-01 anneals the sample up to 1200° C. The processes can be run under atmospheric pressure in Oxygen, Nitrogen, Forming Gas, and Argon environments. The tool can hold 4’’ wafers or smaller chips. Only MOS-compatible materials are allowed. Compound semiconductors and metals are not allowed.
Resources
SOP