Difference between revisions of "Raith EBPG5200+ E-Beam Lithography System"
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| NEMO_Designation = EBL-03 | | NEMO_Designation = EBL-03 | ||
| Lab_Phone = 8-9799 | | Lab_Phone = 8-9799 | ||
− | | SOP Link = [ | + | | SOP Link = [[Raith_EBPG5200%2B_E-Beam_Lithography_System#SOP | SOP]] |
}} | }} | ||
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* Standard semiconductor materials | * Standard semiconductor materials | ||
* Low vapor pressure metals | * Low vapor pressure metals | ||
− | * Resists | + | * Resists |
+ | ** [https://wiki.nano.upenn.edu/wiki/index.php?title=Resists_at_QNF#Standard_e-beam_Resists Standard e-beam resists] | ||
+ | ** [https://wiki.nano.upenn.edu/wiki/index.php?title=Resists_at_QNF#Stockroom_e-beam_Resists Stockroom e-beam resists] | ||
+ | ** [https://wiki.nano.upenn.edu/wiki/index.php?title=Resists_at_QNF#Other_Resists PMGI] | ||
== Resources == | == Resources == | ||
− | ===== | + | ===== SOP ===== |
− | + | <pdf height="800"> File:EBPG5200+ SOP.pdf</pdf> | |
− | * [ | + | |
+ | ===== Useful Information ===== | ||
+ | * [[Raith_EBPG5200%2B_E-Beam_Lithography_System#SOP | SOP]] | ||
* [https://upenn.box.com/s/atymr3okn3xf20rb1kvk7ny79plojobm Graph of Spotsize vs. Current (Internal Use Only)] | * [https://upenn.box.com/s/atymr3okn3xf20rb1kvk7ny79plojobm Graph of Spotsize vs. Current (Internal Use Only)] | ||
+ | * [https://upenn.box.com/s/gzj28stdehm1kfmwjpcnio7vimr4m1w9 Alignment Mark Guidelines] | ||
===== Resist and Process Data ===== | ===== Resist and Process Data ===== | ||
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* [https://avs.scitation.org/doi/full/10.1116/1.2366698 Cold Development for PMMA and ZEP] | * [https://avs.scitation.org/doi/full/10.1116/1.2366698 Cold Development for PMMA and ZEP] | ||
* [https://www.sciencedirect.com/science/article/pii/S0167931702004689 IPA:H<sub>2</sub>O for High Contrast Development of PMMA] | * [https://www.sciencedirect.com/science/article/pii/S0167931702004689 IPA:H<sub>2</sub>O for High Contrast Development of PMMA] | ||
+ | * [[ZEP_Process_Data | ZEP520A Contrast Curve]] |
Latest revision as of 15:17, 17 June 2024
Tool Name | Raith EBPG5200+ EBL |
---|---|
Instrument Type | Lithography |
Staff Manager | David Barth |
Lab Location | Bay 4 |
Tool Manufacturer | Raith |
Tool Model | EBPG5200+ |
NEMO Designation | EBL-03 |
Lab Phone | 8-9799 |
SOP Link | SOP |
Description
The Raith EBPG5200+ is an electron beam lithography tool capable of high resolution patterning at 100 kV. It has a 125 MHz pattern generator, a maximum current of 350 nA, and a 1 mm mainfield size. It has an automatic aperture changer, automatic and dynamic focus and stigmation, and automatic alignment. The EBPG can achieve linewidths <8nm with stitching and overlay accuracy better than 10nm.
Applications
- Large scale, high speed patterning of positive and negative e-beam resists with features from <10 nm to micron/mm scale
Allowed Materials
- Standard semiconductor materials
- Low vapor pressure metals
- Resists
Resources
SOP