Difference between revisions of "EVG 510 Wafer Bonder"
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m (Changed protection level for "EVG 510 Wafer Bonder" ([Edit=Allow only autoconfirmed users] (indefinite) [Move=Allow only autoconfirmed users] (indefinite))) |
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== Description == | == Description == | ||
| − | The | + | The EVG510 Wafer Bonding System is a highly flexible R&D system that can handle small substrate pieces up to 100 mm wafers. The new tool supports a variety of bonding processes, such as anodic, eutectic, diffusion, fusion, solder, and adhesive bonds, as well as other thermal processes, including oxide removal and high temperature bakes under a controlled atmosphere. The system also offers quick re-tooling with a conversion time of less than five minutes, making it ideal for universities and R&D as well as small-volume production applications. |
'''Specification''' | '''Specification''' | ||
Revision as of 12:58, 9 February 2023
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| Tool Name | EVG 510 Wafer Bonder |
|---|---|
| Instrument Type | Back End |
| Staff Manager | Eric Johnston |
| Lab Location | Bay 2 |
| Tool Manufacturer | EV Group |
| Tool Model | 510 |
| NEMO Designation | {{{NEMO_Designation}}} |
| Lab Phone | XXXXX |
| SOP Link | SOP |
Description
The EVG510 Wafer Bonding System is a highly flexible R&D system that can handle small substrate pieces up to 100 mm wafers. The new tool supports a variety of bonding processes, such as anodic, eutectic, diffusion, fusion, solder, and adhesive bonds, as well as other thermal processes, including oxide removal and high temperature bakes under a controlled atmosphere. The system also offers quick re-tooling with a conversion time of less than five minutes, making it ideal for universities and R&D as well as small-volume production applications.
Specification Maximum contact force: 10 kN Maximum temperature: 550 ºC Vacuum: ~0.1 mbar Power supply for anodic bonding: 0-2000 V and 50 mA
Applications
- Anodic wafer bonding
- Eutectic wafer bonding
- Diffusion wafer bonding
- Fusion wafer bonding
- Adhesive wafer bonding