Difference between revisions of "Cambridge Nanotech S200 ALD"

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* [https://repository.upenn.edu/scn_protocols/72/ ALD deposition of SiO<sub>2</sub> using BDEAS and Ozone precursors]
 
* [https://repository.upenn.edu/scn_protocols/72/ ALD deposition of SiO<sub>2</sub> using BDEAS and Ozone precursors]
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===== Most Recent Deposition Rate =====
 
===== Most Recent Deposition Rate =====

Revision as of 10:55, 27 September 2022


Cambridge Nanotech S200 ALD
ALD-01.jpeg
Tool Name Cambridge Nanotech S200 ALD
Instrument Type Deposition
Staff Manager Sam Azadi
Lab Location Bay 1
Tool Manufacturer Ultratech/Cambridge
Tool Model S200
NEMO Designation {{{NEMO_Designation}}}
Lab Phone 215-898-9736
SOP Link QNF SOP

Description

The QNF Savannah ALD is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1.

The QNF Savannah ALD is capable of holding substrates of different sizes (up to 200mm). The system is equipped with six precursor lines for deposition of Al2O3, HfO2, TiO2, and SiO2.

Applications
  • Aluminum oxide deposition
  • Silicon dioxide deposition
  • Titanium oxide deposition
  • Hafnium oxide deposition
  • Deposition of other films can be made available upon request
Allowed material in ALD System
  • Si, SixNy, SiO2, SOI
  • Hard masks compatible with process temperature

Resources

SOPs & Troubleshooting


Protocols and Reports


Most Recent Deposition Rate
Material Name Precursor 1 Precursor 2 Dep. temperature [C] Carrier flow [sccm] Dep. rate [A/cyc] Date [MM/DD/YY]
Name Pulse time [s] Wait time [s] Name Pulse time [s] Wait time [s]
Al2O3 TMA 0.015 5 H2O 0.015 5 200 20 1 09/24/22
HfO2 TDMAHf 0.15 8 H2O 0.015 5 200 20 1.3 09/24/22
TiO2 TDMATi 0.4 10 H2O 0.015 5 250 20 0.4 05/02/22