Difference between revisions of "Oxford 80 Plus RIE"
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== Resources == | == Resources == | ||
− | |||
[https://www.youtube.com/watch?v=aXAcgAkQpLc Oxford 80+ Training Video] | [https://www.youtube.com/watch?v=aXAcgAkQpLc Oxford 80+ Training Video] | ||
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===== SOPs & Troubleshooting ===== | ===== SOPs & Troubleshooting ===== | ||
* [https://repository.upenn.edu/scn_sop/7/ QNF SOP] | * [https://repository.upenn.edu/scn_sop/7/ QNF SOP] | ||
+ | |||
+ | ===== Protocols and Reports ===== | ||
+ | * [https://repository.upenn.edu/scn_tooldata/36/ Reactive Ion Etching (RIE) of Silicon dioxide with tetrafluoromethane (CF<sub>4</sub>)] | ||
+ | |||
+ | * [https://repository.upenn.edu/scn_tooldata/37/ Reactive Ion Etching (RIE) of Silicon nitride with tetrafluoromethane (CF<sub>4</sub>)] |
Revision as of 10:16, 7 April 2022
Tool Name | Oxford 80 Plus RIE |
---|---|
Instrument Type | Etch |
Staff Manager | Sam Azadi |
Lab Location | Bay 2 |
Tool Manufacturer | Oxford Instruments |
Tool Model | 80+ |
NEMO Designation | {{{NEMO_Designation}}} |
Lab Phone | 215-898-9748 |
SOP Link | QNF SOP |
Description
Oxford 80 Plus is an anisotropic dry etch tool. The main use of this tool is to etch SiO2, and SiNx to create hard masks for deep Si etch. However, it etches many other materials, including a variety of resists. The tool is connected to the following gases: Ar, O2, CF4, CHF3, SF6.
The plasma is ignited by the oscillating electric field created by the RF power at 13.56 MHz. The wafer is cooled down via passive cooling through a graphite chuck.
Applications
- Etch of SiO2
- Etch of SiNx
- Etch of Si
- Etch of resist
Resources