Difference between revisions of "Oxford 80 Plus RIE"

From Quattrone Nanofabrication Facility
Jump to navigation Jump to search
(Created page with "Category:Etch {{EquipmentInfo | name = Oxford 80 Plus RIE | Tool_Name = Oxford 80 Plus RIE | image = 300px | imagecaption = | Instrument_Type = Etch...")
 
Line 17: Line 17:
  
 
== Description ==
 
== Description ==
Oxford 80 Plus is an anisotropic dry etch tool. The main use of this tool is to etch SiO2, and SiNx to create hard masks for deep Si etch. However, it etches many other materials, including a variety of resists. The tool is connected to the following gases: Ar, O2, CF4, CHF3, SF6.
+
Oxford 80 Plus is an anisotropic dry etch tool. The main use of this tool is to etch SiO<sub>2</sub>, and SiN<sub>x</sub> to create hard masks for deep Si etch. However, it etches many other materials, including a variety of resists. The tool is connected to the following gases: Ar, O2, CF4, CHF3, SF6.
  
 
The plasma is ignited by the oscillating electric field created by the RF power at 13.56 MHz. The wafer is cooled down via passive cooling through a graphite chuck.
 
The plasma is ignited by the oscillating electric field created by the RF power at 13.56 MHz. The wafer is cooled down via passive cooling through a graphite chuck.
Line 25: Line 25:
 
* Etch of SiNx
 
* Etch of SiNx
 
* Etch of Si
 
* Etch of Si
 
+
* Etch of resist
  
 
== Resources ==
 
== Resources ==

Revision as of 10:10, 7 April 2022


Oxford 80 Plus RIE
DE-04.jpeg
Tool Name Oxford 80 Plus RIE
Instrument Type Etch
Staff Manager Sam Azadi
Lab Location Bay 2
Tool Manufacturer Oxford Instruments
Tool Model 80+
NEMO Designation {{{NEMO_Designation}}}
Lab Phone XXXXX
SOP Link SOP

Description

Oxford 80 Plus is an anisotropic dry etch tool. The main use of this tool is to etch SiO2, and SiNx to create hard masks for deep Si etch. However, it etches many other materials, including a variety of resists. The tool is connected to the following gases: Ar, O2, CF4, CHF3, SF6.

The plasma is ignited by the oscillating electric field created by the RF power at 13.56 MHz. The wafer is cooled down via passive cooling through a graphite chuck.

Applications
  • Etch of SiO2
  • Etch of SiNx
  • Etch of Si
  • Etch of resist

Resources

List of etch characterized etch processes

Oxford 80+ Training Video


SOPs & Troubleshooting