Difference between revisions of "Cambridge Nanotech S200 ALD"
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The QNF Savannah ALD is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1. | The QNF Savannah ALD is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1. | ||
− | The QNF Savannah ALD is capable of holding substrates of different sizes (up to 200mm). The system is equipped with six precursor lines for deposition of | + | The QNF Savannah ALD is capable of holding substrates of different sizes (up to 200mm). The system is equipped with six precursor lines for deposition of Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, TiO<sub>2</sub>, and SiO<sub>2</sub>. |
===== Applications ===== | ===== Applications ===== |
Revision as of 09:01, 7 April 2022
Tool Name | Cambridge Nanotech S200 ALD |
---|---|
Instrument Type | Deposition |
Staff Manager | Sam Azadi |
Lab Location | Bay 1 |
Tool Manufacturer | Ultratech/Cambridge |
Tool Model | S200 |
NEMO Designation | {{{NEMO_Designation}}} |
Lab Phone | 215-898-9736 |
SOP Link | QNF SOP |
Description
The QNF Savannah ALD is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1.
The QNF Savannah ALD is capable of holding substrates of different sizes (up to 200mm). The system is equipped with six precursor lines for deposition of Al2O3, HfO2, TiO2, and SiO2.
Applications
- Aluminum oxide deposition
- Silicon dioxide deposition
- Titanium oxide deposition
- Hafnium oxide deposition
- Deposition of other films can be made available upon request
Allowed material in ALD System
- Si, SixNy, SiO2, SOI
- Hard masks compatible with process temperature