Difference between revisions of "IntlVac NanoQuest 1 IBE"

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| name = IntlVac Nanoquest 1
 
| name = IntlVac Nanoquest 1
 
| Tool_Name = IntlVac IBE  
 
| Tool_Name = IntlVac IBE  
| image = [[Image:DE-03.jpeg|300px]]
+
| image = [[Image:IBE.jpg|450px]]
 
| imagecaption =  
 
| imagecaption =  
 
| Instrument_Type = Etch
 
| Instrument_Type = Etch
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| NEMO_Designation = DE-01
 
| NEMO_Designation = DE-01
 
| Lab_Phone = 215-898-9748
 
| Lab_Phone = 215-898-9748
| SOP Link = [https://repository.upenn.edu/scn_sop/11 SOP]
+
| SOP Link = [[Media:DE01_SOP.pdf|SOP]]
 
}}
 
}}
  
 
== Description ==
 
== Description ==
Nanoquest 1 is an ion miller connected to Ar gas and capable of etch small mm-scale samples up to full 4" wafers. The tool is equipped with a secondary ion mass spectroscopy  (SIMS) unit and is capable of etch with manual endpoint detection. The stage has a tilt motor that allows for etch angles between 0 (directly facing the beam) and 90 degrees (parallel to the beam).
+
NanoQuest 1 is an ion miller connected to Ar gas and capable of etching small mm-scale samples up to full 4" wafers. The tool is equipped with a secondary ion mass spectroscopy  (SIMS) unit and is capable of etching with manual endpoint detection. The stage has a tilt motor that allows for etch angles between 0 (directly facing the beam) and 90 degrees (parallel to the beam).
  
The tool in QNF is connected to Ar gas and can etch samples up to 4" wafer.
+
The tool in QNF is connected to Ar gas and can etch samples up to 4" wafers.
 
Available beam voltages are: 300 V, 400 V, 450 V, and 500 V
 
Available beam voltages are: 300 V, 400 V, 450 V, and 500 V
  
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* Ion milling
 
* Ion milling
  
 +
== Standard Process Information ==
  
 +
{| class="wikitable"
 +
|-
 +
! Material || Voltage [V] || tilt [degree] || Etch Rate [nm/min]
 +
|-
 +
| [[ Cambridge Nanotech S200 ALD | ''' Al<sub>2</sub>O<sub>3<sub>''']] || 400 || 45 || 21
 +
|-
 +
| [[ Oxford PlasmaLab 100 PECVD | ''' SiO<sub>2<sub>''']] || 300 || 0 || 15
 +
|-
 +
| [[ Oxford PlasmaLab 100 PECVD | ''' SiO<sub>2<sub>''']] || 500 || 0 || 40
 +
|}
  
== Resources ==
+
==== Process information from user community ====  
  
 +
{| class="wikitable"
 +
|-
 +
! Material || Voltage [V] || tilt [degree] || Etch Rate [nm/min]
 +
|-
 +
| Al || 400 || 45 || 60
 +
|-
 +
| Al || 500 || 45 || 100
 +
|-
 +
| AlN || 500 || 45 || 52
 +
|-
 +
| AlSc(.36)N || 500 || 45 || 50
 +
|-
 +
| HfO2 || 300 || 0 || 20
 +
|-
 +
| LiNbO3 || 500 || 0 || 40 
 +
|-
 +
| Pt || 500 || 45 || 20
 +
|-
 +
| SiO2 || 500 || 45 || 78
 +
|}
 +
 +
== SOP & Troubleshooting ==
 +
 +
*Operation video
 
[https://www.youtube.com/watch?v=1GsWXfCUXUg manual loading/unloading operation video]
 
[https://www.youtube.com/watch?v=1GsWXfCUXUg manual loading/unloading operation video]
  
== Standard Process Information ==
 
 
- Etch rate of Al deposited with QNF's PVD-06 at 400 V, 45 degree, 15 RPM rotation is ~ 60 nm/min
 
- Etch rate of Al deposited with QNF's PVD-06 at 500 V, 45 degree, 15 RPM rotation is ~ 100 nm/min
 
- Etch rate of AlScN deposited with QNF's PVD-06 at 500 V, 45 degree, 15 RPM rotation is ~ 43 nm/min
 
- Etch rate of Pt deposited with QNF's PVD-02 at 500 V, 45 degree, 15 RPM rotation is ~ 20 nm/min
 
- Etch rate of LiNbO3 at 500 V, 0 degree, 10 RPM rotation is ~ 40 nm/min
 
  
===== SOPs & Troubleshooting =====
+
*SOP
 +
<pdf height="800"> File:DE01_SOP.pdf</pdf>

Latest revision as of 13:11, 6 November 2024


IntlVac Nanoquest 1
IBE.jpg
Tool Name IntlVac IBE
Instrument Type Etch
Staff Manager Sam Azadi
Lab Location Bay 2
Tool Manufacturer IntlVac
Tool Model Nanoquest 1
NEMO Designation DE-01
Lab Phone 215-898-9748
SOP Link SOP

Description

NanoQuest 1 is an ion miller connected to Ar gas and capable of etching small mm-scale samples up to full 4" wafers. The tool is equipped with a secondary ion mass spectroscopy (SIMS) unit and is capable of etching with manual endpoint detection. The stage has a tilt motor that allows for etch angles between 0 (directly facing the beam) and 90 degrees (parallel to the beam).

The tool in QNF is connected to Ar gas and can etch samples up to 4" wafers. Available beam voltages are: 300 V, 400 V, 450 V, and 500 V

Applications
  • Ion milling

Standard Process Information

Material Voltage [V] tilt [degree] Etch Rate [nm/min]
Al2O3 400 45 21
SiO2 300 0 15
SiO2 500 0 40

Process information from user community

Material Voltage [V] tilt [degree] Etch Rate [nm/min]
Al 400 45 60
Al 500 45 100
AlN 500 45 52
AlSc(.36)N 500 45 50
HfO2 300 0 20
LiNbO3 500 0 40
Pt 500 45 20
SiO2 500 45 78

SOP & Troubleshooting

  • Operation video

manual loading/unloading operation video


  • SOP