Difference between revisions of "Oxford 80 Plus RIE"

**Oxford 80 Plus RIE**
Tool Name	Oxford 80 Plus RIE
Instrument Type	Etch
Staff Manager	Sam Azadi
Lab Location	Bay 2
Tool Manufacturer	Oxford Instruments
Tool Model	80+
NEMO Designation	DE-04
Lab Phone	215-898-9748
SOP Link	QNF SOP

Revision as of 14:34, 17 June 2024

Description

Oxford 80 Plus is an anisotropic dry etch tool. The main use of this tool is to etch SiO₂, and SiN_x to create hard masks for deep Si etch. However, it etches many other materials, including a variety of resists. The tool is connected to the following gases: Ar, O2, CF4, CHF3, SF6.

The plasma is ignited by the oscillating electric field created by the RF power at 13.56 MHz. The wafer is cooled down via passive cooling through a graphite chuck.

Applications

Etch of SiO2
Etch of SiNx
Etch of Si
Etch of resist

The following materials are not allowed in the chamber

- Au, Ag, PZT, ZnO, ITO, Pb, Zn, In, Ni

The following materials can not be exposed to plasma in the chamber

- SU-8, Cyclone, Polyimide

Standard Process Information

Protocols and Reports

Process parameters and characterization of etching of ...

Etch Rate

Recipe parameters are defined in the reports above. - all rates are calculated from a full 4" wafers, small features may have lower etch rate.

Etch rate of...

PECVD oxide and nitride are listed in the reports above.
thermal SiO2 using CF4 recipe: 48 nm/min
thermal SiO2 using CHF3/O2 recipe: 45 nm/min
LPCVD SiNx using CF4 recipe: 55 nm/min, DV bias 440 V - measured on 03/05/2024
LPCVD SiNx using CHF3/O2 recipe: 45 nm/min, DC bias 410 V - measured on 03/05/2024

Resources

Oxford 80+ Training Video

PECVD SiO₂ via CF₄

PECVD SiN_x via CF₄

PECVD SiO₂ via CHF₃ + O ₂

PECVD SiN_x via CHF₃ + O ₂

PECVD SiO₂ via CHF₃ + O ₂

Si and ZEP520A resist via CF₄

Comparison of Si and PECVD SiO₂ via CF₄ and CHF₃ + O ₂

SOPs & Troubleshooting

QNF SOP

ATPACT Manual

E 200T-600T Counters Manual

@@ Line 39: / Line 39: @@
 Process parameters and characterization of etching of ...
-* [https://repository.upenn.edu/scn_tooldata/36/ '''PECVD SiO<sub>2</sub> via CF<sub>4</sub>''' ]
-* [https://repository.upenn.edu/scn_tooldata/37/ '''PECVD SiN<sub>x</sub> via CF<sub>4</sub>''']
-* [https://repository.upenn.edu/scn_tooldata/38/ '''PECVD SiO<sub>2</sub> via CHF<sub>3</sub> + O <sub>2</sub>''']
-* [https://repository.upenn.edu/scn_tooldata/39/ '''PECVD SiN<sub>x</sub> via CHF<sub>3</sub> + O <sub>2</sub>''']
-* [https://repository.upenn.edu/scn_protocols/29/ '''PECVD SiO<sub>2</sub> via CHF<sub>3</sub> + O <sub>2</sub>''']
-* [https://repository.upenn.edu/scn_tooldata/40/ '''Si and ZEP520A resist via CF<sub>4</sub>''']
-* [https://repository.upenn.edu/scn_protocols/55/ ''' Comparison of Si and PECVD SiO<sub>2</sub> via CF<sub>4</sub> and CHF<sub>3</sub> + O <sub>2</sub>''']
 ==== Etch Rate ====
@@ Line 67: / Line 54: @@
 [https://www.youtube.com/watch?v=aXAcgAkQpLc Oxford 80+ Training Video]
+* [https://repository.upenn.edu/scn_tooldata/36/ '''PECVD SiO<sub>2</sub> via CF<sub>4</sub>''' ]
+* [https://repository.upenn.edu/scn_tooldata/37/ '''PECVD SiN<sub>x</sub> via CF<sub>4</sub>''']
+* [https://repository.upenn.edu/scn_tooldata/38/ '''PECVD SiO<sub>2</sub> via CHF<sub>3</sub> + O <sub>2</sub>''']
+* [https://repository.upenn.edu/scn_tooldata/39/ '''PECVD SiN<sub>x</sub> via CHF<sub>3</sub> + O <sub>2</sub>''']
+* [https://repository.upenn.edu/scn_protocols/29/ '''PECVD SiO<sub>2</sub> via CHF<sub>3</sub> + O <sub>2</sub>''']
+* [https://repository.upenn.edu/scn_tooldata/40/ '''Si and ZEP520A resist via CF<sub>4</sub>''']
+* [https://repository.upenn.edu/scn_protocols/55/ ''' Comparison of Si and PECVD SiO<sub>2</sub> via CF<sub>4</sub> and CHF<sub>3</sub> + O <sub>2</sub>''']
 ===== SOPs & Troubleshooting =====