Difference between revisions of "Veeco Savannah 200"

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{{EquipmentInfo
 
{{EquipmentInfo
| name = Creating Veeco Savannah 200
+
| name = Veeco Savannah 200
| Tool_Name = Creating Veeco Savannah 200
+
| Tool_Name = Veeco Savannah 200
 
| image = [[Image:ALD-03.jpeg|300px]]
 
| image = [[Image:ALD-03.jpeg|300px]]
 
| imagecaption =  
 
| imagecaption =  
 
| Instrument_Type = Deposition
 
| Instrument_Type = Deposition
| Staff_Manager = Sam Azadi
+
| Staff_Manager = [[Sam Azadi | Sam Azadi]]
 
| Lab_Location = Bay 2
 
| Lab_Location = Bay 2
 
| Tool_Manufacturer = Veeco
 
| Tool_Manufacturer = Veeco
 
| Tool_Model = Savannah 200
 
| Tool_Model = Savannah 200
| Iris_Designation = ALD-03
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| NEMO_Designation = ALD-03
| Lab_Phone = XXXXX
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| Lab_Phone = 215-898-9736
 
| SOP Link = [https://repository.upenn.edu/scn_sop/6/ SOP]
 
| SOP Link = [https://repository.upenn.edu/scn_sop/6/ SOP]
 
}}
 
}}
  
 
== Description ==
 
== Description ==
Savannah is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode for thin film deposition on Ultra High Aspect Ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1. Savannah is capable of holding substrates of different sizes up to 200mm. The Savannah thin film deposition systems are equipped with heated precursors lines and the option to add up to six lines.
+
Savannah is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode for thin film deposition on Ultra High Aspect Ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1. Savannah is capable of holding substrates of different sizes up to 200mm. The Savannah thin film deposition systems are equipped with Pd, Pt precursors, TMA, HfCl4, BDEAS and Ozone.
  
 
===== Films =====
 
===== Films =====
 
* Pt
 
* Pt
* Aluminum oxide
+
* Al2O3
 
* Pd
 
* Pd
  
 
== Resources ==
 
== Resources ==
 +
 +
===== Most Recent Deposition Rates =====
 +
 +
{| class="wikitable"
 +
! rowspan=2 |Material Name
 +
! colspan=3 |Precursor 1
 +
! colspan =3 |Precursor 2
 +
! rowspan=2 |Dep. temperature [C]
 +
!rowspan=2 | Carrier flow [sccm]
 +
!rowspan=2 | Dep. rate [A/cyc]
 +
!rowspan=2 |Date [MM/DD/YY]
 +
|-
 +
! Name || Pulse time [s] || Wait time [s] || Name || Pulse time [s] || Wait time [s]
 +
|-
 +
| Al<sub>2</sub>O<sub>3</sub> || TMA || 0.015 || 5 || O<sub>3</sub> || 0.05 || 5 || 200 || 20 || 1.1 || 10/17/22
 +
|-
 +
| Pt || MeCpPtMe<sub>3</sub> || 0.6 || 5 || O<sub>3</sub> || 0.05 || 5 || 200 || 20 || 0.7 || 10/18/22
 +
|-
 +
|}
 +
 +
 +
 +
-Note that Pt deposition saturates at ~ 10 nm and the deposition rate only applies to thicknesses of ~ 5 - 10nm.
 +
 +
-Thin film sheet resistance of Pt deposited using the process parameters above at ~ 10 nm is: ~ 30 Ohm/Sq
  
 
===== SOPs & Troubleshooting =====
 
===== SOPs & Troubleshooting =====
 
* [https://repository.upenn.edu/scn_sop/6/ QNF SOP]
 
* [https://repository.upenn.edu/scn_sop/6/ QNF SOP]
 +
* [https://upenn.box.com/s/3hq8iik8jeb1385mrwgs16i6vfpvxt6f ALD KOH Cleaning Procedure]

Latest revision as of 09:57, 20 March 2024


Veeco Savannah 200
ALD-03.jpeg
Tool Name Veeco Savannah 200
Instrument Type Deposition
Staff Manager Sam Azadi
Lab Location Bay 2
Tool Manufacturer Veeco
Tool Model Savannah 200
NEMO Designation ALD-03
Lab Phone 215-898-9736
SOP Link SOP

Description

Savannah is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode for thin film deposition on Ultra High Aspect Ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1. Savannah is capable of holding substrates of different sizes up to 200mm. The Savannah thin film deposition systems are equipped with Pd, Pt precursors, TMA, HfCl4, BDEAS and Ozone.

Films
  • Pt
  • Al2O3
  • Pd

Resources

Most Recent Deposition Rates
Material Name Precursor 1 Precursor 2 Dep. temperature [C] Carrier flow [sccm] Dep. rate [A/cyc] Date [MM/DD/YY]
Name Pulse time [s] Wait time [s] Name Pulse time [s] Wait time [s]
Al2O3 TMA 0.015 5 O3 0.05 5 200 20 1.1 10/17/22
Pt MeCpPtMe3 0.6 5 O3 0.05 5 200 20 0.7 10/18/22


-Note that Pt deposition saturates at ~ 10 nm and the deposition rate only applies to thicknesses of ~ 5 - 10nm.

-Thin film sheet resistance of Pt deposited using the process parameters above at ~ 10 nm is: ~ 30 Ohm/Sq

SOPs & Troubleshooting