Difference between revisions of "Oxford 80 Plus RIE"

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* [https://repository.upenn.edu/scn_tooldata/37/ Reactive Ion Etching (RIE) of Silicon nitride with tetrafluoromethane (CF<sub>4</sub>)]
 
* [https://repository.upenn.edu/scn_tooldata/37/ Reactive Ion Etching (RIE) of Silicon nitride with tetrafluoromethane (CF<sub>4</sub>)]
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* [https://repository.upenn.edu/scn_tooldata/38/ Reactive Ion Etching (RIE) of Silicon dioxide with trifluoromethane (CHF<sub>3</sub>) and oxygen]
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* [https://repository.upenn.edu/scn_tooldata/39/ Reactive Ion Etching (RIE) of Silicon nitride with trifluoromethane (CHF<sub>3</sub>) and oxygen]
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* [https://repository.upenn.edu/scn_protocols/29/ Reactive Ion Etching (RIE) selectivity of silicon dioxide and S1800 resist using trifluoromethane (CHF<sub>3</sub>) and oxygen]
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* [https://repository.upenn.edu/scn_tooldata/40/ Reactive Ion Etching (RIE) selectivity of silicon and ZEP520A resist using tetrafluoromethane (CF<sub>4</sub>)]

Revision as of 11:27, 7 April 2022


Oxford 80 Plus RIE
DE-04.jpeg
Tool Name Oxford 80 Plus RIE
Instrument Type Etch
Staff Manager Sam Azadi
Lab Location Bay 2
Tool Manufacturer Oxford Instruments
Tool Model 80+
NEMO Designation {{{NEMO_Designation}}}
Lab Phone 215-898-9748
SOP Link QNF SOP

Description

Oxford 80 Plus is an anisotropic dry etch tool. The main use of this tool is to etch SiO2, and SiNx to create hard masks for deep Si etch. However, it etches many other materials, including a variety of resists. The tool is connected to the following gases: Ar, O2, CF4, CHF3, SF6.

The plasma is ignited by the oscillating electric field created by the RF power at 13.56 MHz. The wafer is cooled down via passive cooling through a graphite chuck.

Applications
  • Etch of SiO2
  • Etch of SiNx
  • Etch of Si
  • Etch of resist

Resources

Oxford 80+ Training Video


SOPs & Troubleshooting
Protocols and Reports