Difference between revisions of "Cambridge Nanotech S200 ALD"

**Cambridge Nanotech S200 ALD**
Tool Name	Cambridge Nanotech S200 ALD
Instrument Type	Deposition
Staff Manager	Sam Azadi
Lab Location	Bay 1
Tool Manufacturer	Ultratech/Cambridge
Tool Model	S200
NEMO Designation	{{{NEMO_Designation}}}
Lab Phone	215-898-9736
SOP Link	QNF SOP

Revision as of 10:42, 8 December 2022

Description

The QNF Savannah ALD is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1.

The QNF Savannah ALD is capable of holding substrates of different sizes (up to 200mm). The system is equipped with six precursor lines for deposition of Al₂O₃, HfO₂, TiO₂, and SiO₂.

Applications

Aluminum oxide deposition
Silicon dioxide deposition
Titanium oxide deposition
Hafnium oxide deposition
Deposition of other films can be made available upon request

Allowed material in ALD System

Si, Si_xN_y, SiO₂, SOI
Hard masks compatible with process temperature

Process Data

Standard Processes

water based depositions

Material Name	Precursor 1			Precursor 2			Dep. temperature [C]	Carrier flow [sccm]	Dep. rate [A/cyc]	Date [MM/DD/YY]
Material Name	Name	Pulse time [s]	Wait time [s]	Name	Pulse time [s]	Wait time [s]	Dep. temperature [C]	Carrier flow [sccm]	Dep. rate [A/cyc]	Date [MM/DD/YY]
Al₂O₃	TMA	0.015	5	H₂O	0.015	5	200	20	1	09/24/22
HfO₂	TDMAHf	0.15	8	H₂O	0.015	5	200	20	1.3	09/24/22
HfO₂	TDMAHf	0.4	8	H₂O	0.015	8	150	20	1.3	12/06/22
TiO₂	TDMATi	0.4	10	H₂O	0.015	5	250	20	0.4	05/02/22

Ozone based depositions

Material Name	Precursor 1			Precursor 2			Dep. temperature [C]	Carrier flow [sccm]	Dep. rate [A/cyc]	Date [MM/DD/YY]
Material Name	Name	Pulse time [s]	Wait time [s] : Stop valve closed / open	Name	Pulse time [s]	Wait time [s] : Stop valve closed / open	Dep. temperature [C]	Carrier flow [sccm]	Dep. rate [A/cyc]	Date [MM/DD/YY]	SiO₂	BDEAS	0.15	5 SV closed/ 8 SV open	O₃	0.015	5 SV closed/ 8 SV open	150	20	0.5	12/08/22

Deposition Rate Monitoring

Deposition uniformity example

HfO2 film uniformity deposited on 12/06/2022, process details in the table above

Resources

SOPs & Troubleshooting

QNF SOP

Protocols and Reports

ALD deposition of SiO₂ using BDEAS and Ozone precursors

@@ Line 37: / Line 37: @@
 ==== Standard Processes ====
+* water based depositions
 {| class="wikitable"
 ! rowspan=2 |Material Name
@@ Line 55: / Line 57: @@
 |-
 | TiO<sub>2</sub> || TDMATi || 0.4 || 10 || H<sub>2</sub>O || 0.015 || 5 || 250 || 20 || 0.4 || 05/02/22
+|-
+|}
+* Ozone based depositions
+{| class="wikitable"
+! rowspan=2 |Material Name
+! colspan=3 |Precursor 1
+! colspan =3 |Precursor 2
+! rowspan=2 |Dep. temperature [C]
+!rowspan=2 | Carrier flow [sccm]
+!rowspan=2 | Dep. rate [A/cyc]
+!rowspan=2 |Date [MM/DD/YY]
+|-
+! Name || Pulse time [s] || Wait time [s] : Stop valve closed / open || Name || Pulse time [s] || Wait time [s] : Stop valve closed / open
+| SiO<sub>2</sub> || BDEAS || 0.15 || 5 SV closed/ 8 SV open || O<sub>3</sub> || 0.015 || 5 SV closed/ 8 SV open  || 150 || 20 || 0.5 || 12/08/22
 |-
 |}