Difference between revisions of "Cambridge Nanotech S200 ALD"
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| imagecaption = | | imagecaption = | ||
| Instrument_Type = Deposition | | Instrument_Type = Deposition | ||
| − | | Staff_Manager = Sam Azadi | + | | Staff_Manager = [[Sam Azadi | Sam Azadi]] |
| Lab_Location = Bay 1 | | Lab_Location = Bay 1 | ||
| Tool_Manufacturer = Ultratech/Cambridge | | Tool_Manufacturer = Ultratech/Cambridge | ||
| Tool_Model = S200 | | Tool_Model = S200 | ||
| − | | | + | | NEMO_Designation = ALD-01 |
| Lab_Phone = 215-898-9736 | | Lab_Phone = 215-898-9736 | ||
| SOP Link = [https://repository.upenn.edu/scn_sop/6/ QNF SOP] | | SOP Link = [https://repository.upenn.edu/scn_sop/6/ QNF SOP] | ||
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The QNF Savannah ALD is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1. | The QNF Savannah ALD is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1. | ||
| − | The QNF Savannah ALD is capable of holding substrates of different sizes (up to 200mm). The system is equipped with six precursor lines for deposition of Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, and TiO<sub>2</sub>. | + | The QNF Savannah ALD is capable of holding substrates of different sizes (up to 200mm). The system is equipped with six precursor lines for deposition of Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, SiO<sub>2</sub>, and TiO<sub>2</sub>. |
===== Applications ===== | ===== Applications ===== | ||
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* Titanium oxide deposition | * Titanium oxide deposition | ||
* Hafnium oxide deposition | * Hafnium oxide deposition | ||
| + | * Silicon Dioxide deposition | ||
* Deposition of other films can be made available upon request | * Deposition of other films can be made available upon request | ||
| Line 48: | Line 49: | ||
! Name || Pulse time [s] || Wait time [s] || Name || Pulse time [s] || Wait time [s] | ! Name || Pulse time [s] || Wait time [s] || Name || Pulse time [s] || Wait time [s] | ||
|- | |- | ||
| − | | Al<sub>2</sub>O<sub>3</sub> || TMA || 0.015 || 5 || H<sub>2</sub>O || 0.015 || 5 || 245 || 20 || 1 || | + | | Al<sub>2</sub>O<sub>3</sub> || TMA || 0.015 || 5 || H<sub>2</sub>O || 0.015 || 5 || 245 || 20 || 1 || 06/28/23 |
|- | |- | ||
| Al<sub>2</sub>O<sub>3</sub> || TMA || 0.015 || 5 || H<sub>2</sub>O || 0.015 || 5 || 200 || 20 || 1 || 09/24/22 | | Al<sub>2</sub>O<sub>3</sub> || TMA || 0.015 || 5 || H<sub>2</sub>O || 0.015 || 5 || 200 || 20 || 1 || 09/24/22 | ||
|- | |- | ||
| − | | Al<sub>2</sub>O<sub>3</sub> || TMA || 0.020 || 5 || H<sub>2</sub>O || 0.020 || 5 || 150 || 20 || 1 || | + | | Al<sub>2</sub>O<sub>3</sub> || TMA || 0.020 || 5 || H<sub>2</sub>O || 0.020 || 5 || 150 || 20 || 1 || 02/09/24 |
|- | |- | ||
| HfO<sub>2</sub> || TDMAHf || 0.15 || 8 || H<sub>2</sub>O || 0.015 || 5 || 200 || 20 || 1.3 || 09/24/22 | | HfO<sub>2</sub> || TDMAHf || 0.15 || 8 || H<sub>2</sub>O || 0.015 || 5 || 200 || 20 || 1.3 || 09/24/22 | ||
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| TiO<sub>2</sub> || TDMATi || 0.4 || 10 || H<sub>2</sub>O || 0.015 || 5 || 250 || 20 || 0.4 || 05/02/22 | | TiO<sub>2</sub> || TDMATi || 0.4 || 10 || H<sub>2</sub>O || 0.015 || 5 || 250 || 20 || 0.4 || 05/02/22 | ||
|- | |- | ||
| − | | TiO<sub>2</sub> || TDMATi || 0.3 || 10 || H<sub>2</sub>O || 0.015 || 10 || 150 || 20 || 0.5 || 02/ | + | | TiO<sub>2</sub> || TDMATi || 0.3 || 10 || H<sub>2</sub>O || 0.015 || 10 || 150 || 20 || 0.5 || 02/02/24 |
|- | |- | ||
|} | |} | ||
| − | + | * Ozone based depositions | |
{| class="wikitable" | {| class="wikitable" | ||
! rowspan=2 |Material Name | ! rowspan=2 |Material Name | ||
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! Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open || Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open | ! Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open || Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open | ||
|- | |- | ||
| − | | SiO<sub>2</sub> || BDEAS || 0. | + | | SiO<sub>2</sub> || BDEAS || 0.02 || 5 SV closed/ 3 SV open || O<sub>3</sub> || 0.2 || 20 SV closed/ 5 SV open || 200 || 20 || 0.6 || 02/12/24 |
|- | |- | ||
|} | |} | ||
| − | |||
| − | |||
==== Deposition Rate Monitoring ==== | ==== Deposition Rate Monitoring ==== | ||
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* [https://repository.upenn.edu/scn_sop/6/ QNF SOP] | * [https://repository.upenn.edu/scn_sop/6/ QNF SOP] | ||
* [https://upenn.box.com/s/3hq8iik8jeb1385mrwgs16i6vfpvxt6f ALD KOH Cleaning Procedure] | * [https://upenn.box.com/s/3hq8iik8jeb1385mrwgs16i6vfpvxt6f ALD KOH Cleaning Procedure] | ||
| + | |||
| + | |||
| + | ===== Protocols and Reports ===== | ||
| + | |||
| + | * [https://repository.upenn.edu/scn_protocols/72/ ALD deposition of SiO<sub>2</sub> using BDEAS and Ozone precursors] | ||
Latest revision as of 15:29, 13 February 2024
 |
|
| Tool Name | Cambridge Nanotech S200 ALD |
|---|---|
| Instrument Type | Deposition |
| Staff Manager | Sam Azadi |
| Lab Location | Bay 1 |
| Tool Manufacturer | Ultratech/Cambridge |
| Tool Model | S200 |
| NEMO Designation | ALD-01 |
| Lab Phone | 215-898-9736 |
| SOP Link | QNF SOP |
Description
The QNF Savannah ALD is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1.
The QNF Savannah ALD is capable of holding substrates of different sizes (up to 200mm). The system is equipped with six precursor lines for deposition of Al2O3, HfO2, SiO2, and TiO2.
Applications
- Aluminum oxide deposition
- Titanium oxide deposition
- Hafnium oxide deposition
- Silicon Dioxide deposition
- Deposition of other films can be made available upon request
Allowed material in ALD System
- Si, SixNy, SiO2, SOI
- Hard masks compatible with process temperature
Process Data
Standard Processes
- Water based depositions
| Material Name | Precursor 1 | Precursor 2 | Dep. temperature [C] | Carrier flow [sccm] | Dep. rate [A/cyc] | Date [MM/DD/YY] | ||||
|---|---|---|---|---|---|---|---|---|---|---|
| Name | Pulse time [s] | Wait time [s] | Name | Pulse time [s] | Wait time [s] | |||||
| Al2O3 | TMA | 0.015 | 5 | H2O | 0.015 | 5 | 245 | 20 | 1 | 06/28/23 |
| Al2O3 | TMA | 0.015 | 5 | H2O | 0.015 | 5 | 200 | 20 | 1 | 09/24/22 |
| Al2O3 | TMA | 0.020 | 5 | H2O | 0.020 | 5 | 150 | 20 | 1 | 02/09/24 |
| HfO2 | TDMAHf | 0.15 | 8 | H2O | 0.015 | 5 | 200 | 20 | 1.3 | 09/24/22 |
| HfO2 | TDMAHf | 0.3 | 10 | H2O | 0.015 | 8 | 150 | 20 | 1.3 | 04/25/23 |
| TiO2 | TDMATi | 0.4 | 10 | H2O | 0.015 | 5 | 250 | 20 | 0.4 | 05/02/22 |
| TiO2 | TDMATi | 0.3 | 10 | H2O | 0.015 | 10 | 150 | 20 | 0.5 | 02/02/24 |
- Ozone based depositions
| Material Name | Precursor 1 | Precursor 2 | Dep. temperature [C] | Carrier flow [sccm] | Dep. rate [A/cyc] | Date [MM/DD/YY] | ||||
|---|---|---|---|---|---|---|---|---|---|---|
| Name | Pulse time [s] | Wait time [s] : Stop Valve closed / open | Name | Pulse time [s] | Wait time [s] : Stop Valve closed / open | |||||
| SiO2 | BDEAS | 0.02 | 5 SV closed/ 3 SV open | O3 | 0.2 | 20 SV closed/ 5 SV open | 200 | 20 | 0.6 | 02/12/24 |
Deposition Rate Monitoring
Resources
SOPs & Troubleshooting