Heidelberg DWL 66+ Laser Writer
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| Tool Name | Heidelberg DWL 66+ Laser Writer |
|---|---|
| Instrument Type | Lithography |
| Staff Manager | David Jones |
| Lab Location | Bay 2 |
| Tool Manufacturer | Heidelberg |
| Tool Model | DWL 66+ |
| NEMO Designation | {{{NEMO_Designation}}} |
| Lab Phone | 8-9799 |
| SOP Link | [1] |
Description
The fully automated DWL 66+ laser writing system is located inside an environment chamber for stable environment of the system with controlled laminar airflow and temperature stability. The chamber is situated on a granite base with air cushions for vibration isolation. The optical system includes highly reflective mirrors and acousto-optic modulators for real-time beam correction.
Lens & Resolution
- 2 mm lens (optical autofocus): 600 nm
- 10 mm lens (pneumatic autofocus): 2 µm
- 40 mm lens (pneumatic autofocus): 10 µm
Applications
- Patterning of photomasks
- Direct laser writing of patterns
Processes
The following exposure parameters may be used to expose photomasks.
| Resist | Write Head | Filter(s) | Laser Power (mW) | Intensity | Focus | Focus mode |
|---|---|---|---|---|---|---|
| AZ1500 | 10mm | 50% | 50 | 70% | -10 | Pnematic |
| IP3500 | 10mm | None | 50 | 90% | -10 | Pnematic |
| IP3500 | 2mm | 12.5% | 50 | 30% | -30 | Pnematic |
The following exposure parameters may be used to direct write into S1800 resist (soft baked at 115C for 1 minute) with the 10mm write head. For the optimum focus, please refer to the "AZ1500.txt" or "IP3500.txt" files for the optimum value to use.
| Resist thk (µm) | Laser power (mW) | Intensity | Filter |
|---|---|---|---|
| 0.50 | 28.83 | 100% | 50% |
| 0.55 | 29.53 | 100% | 50% |
| 0.60 | 30.33 | 100% | 50% |
| 0.65 | 31.25 | 100% | 50% |
| 0.70 | 32.28 | 100% | 50% |
| 0.75 | 33.41 | 100% | 50% |
| 0.80 | 34.66 | 100% | 50% |
| 0.85 | 36.03 | 100% | 50% |
| 0.90 | 37.50 | 100% | 50% |
| 0.95 | 39.08 | 100% | 50% |
| 1.00 | 40.78 | 100% | 50% |
| 1.05 | 42.58 | 100% | 50% |
| 1.10 | 44.50 | 100% | 50% |
| 1.15 | 46.53 | 100% | 50% |
| 1.20 | 48.67 | 100% | 50% |
| 1.25 | 50.92 | 100% | 50% |
| 1.30 | 53.28 | 100% | 50% |
| 1.35 | 55.75 | 100% | 50% |
| 1.40 | 58.34 | 100% | 50% |
| 1.45 | 61.03 | 100% | 50% |
| 1.50 | 63.84 | 100% | 50% |
The following exposure parameters may be used to direct write into S1800 resist (soft baked at 115C for 1 minute) with the 2mm write head. For the optimum focus, please refer to the "AZ1500.txt" or "IP3500.txt" files for the optimum value to use.
| Resist Thk (µm) | Laser Power (mW) | Intensity | Filter |
|---|---|---|---|
| 0.5 | 24.123 | 70% | 12.5% & 25% |
| 0.55 | 26.421 | 70% | 12.5% & 25% |
| 0.6 | 28.708 | 70% | 12.5% & 25% |
| 0.65 | 30.984 | 70% | 12.5% & 25% |
| 0.7 | 33.249 | 70% | 12.5% & 25% |
| 0.75 | 35.503 | 70% | 12.5% & 25% |
| 0.8 | 37.747 | 70% | 12.5% & 25% |
| 0.85 | 39.979 | 70% | 12.5% & 25% |
| 0.9 | 42.200 | 70% | 12.5% & 25% |
| 0.95 | 44.411 | 70% | 12.5% & 25% |
| 1 | 46.610 | 70% | 12.5% & 25% |
| 1.05 | 48.799 | 70% | 12.5% & 25% |
| 1.1 | 50.977 | 70% | 12.5% & 25% |
| 1.15 | 53.143 | 70% | 12.5% & 25% |
| 1.2 | 55.299 | 70% | 12.5% & 25% |
| 1.25 | 57.444 | 70% | 12.5% & 25% |
| 1.3 | 59.578 | 70% | 12.5% & 25% |
| 1.35 | 61.701 | 70% | 12.5% & 25% |
| 1.4 | 63.813 | 70% | 12.5% & 25% |
| 1.45 | 65.914 | 70% | 12.5% & 25% |
| 1.5 | 68.005 | 70% | 12.5% & 25% |