Heidelberg DWL 66+ Laser Writer
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| Tool Name | Heidelberg DWL 66+ Laser Writer |
|---|---|
| Instrument Type | Lithography |
| Staff Manager | David Jones |
| Lab Location | Bay 2 |
| Tool Manufacturer | Heidelberg |
| Tool Model | DWL 66+ |
| NEMO Designation | {{{NEMO_Designation}}} |
| Lab Phone | 8-9799 |
| SOP Link | SOP |
Description
The fully automated DWL 66+ laser writing system is located inside an environment chamber for stable environment of the system with controlled laminar airflow and temperature stability. The chamber is situated on a granite base with air cushions for vibration isolation. The optical system includes highly reflective mirrors and acousto-optic modulators for real-time beam correction.
Lens & Resolution
- 2 mm lens (optical autofocus): 600 nm
- 10 mm lens (pneumatic autofocus): 2 µm
- 40 mm lens (pneumatic autofocus): 10 µm
Applications
- Patterning of photomasks
- Direct laser writing of patterns
Processes
The following exposure parameters may be used to expose photomasks.
| Resist | Write Head | Filter(s) | Laser Power (mW) | Intensity | Focus | # of passes | Focus mode |
|---|---|---|---|---|---|---|---|
| AZ1500 | 10mm | 50% | 50 | 70% | 30 | 1 | Pneumatic |
| IP3500 | 10mm | None | 50 | 90% | 30 | 2 | Pneumatic |
| IP3500 | 2mm | 25% | 50 | 30% | 30 | 1 | Pneumatic |
The following exposure parameters may be used to direct write into S1800 resist (soft baked at 115C for 1 minute) with the 10mm write head. For the optimum focus, please refer to the "AZ1500.txt" or "IP3500.txt" files for the optimum value to use.
| Resist thk (µm) | Laser power (mW) | Intensity | Filter |
|---|---|---|---|
| 0.50 | 28.8 | 100% | None |
| 0.55 | 29.5 | 100% | None |
| 0.60 | 30.3 | 100% | None |
| 0.65 | 31.3 | 100% | None |
| 0.70 | 32.3 | 100% | None |
| 0.75 | 33.4 | 100% | None |
| 0.80 | 34.7 | 100% | None |
| 0.85 | 36.0 | 100% | None |
| 0.90 | 37.5 | 100% | None |
| 0.95 | 39.1 | 100% | None |
| 1.00 | 40.8 | 100% | None |
| 1.05 | 42.6 | 100% | None |
| 1.10 | 44.5 | 100% | None |
| 1.15 | 46.5 | 100% | None |
| 1.20 | 48.7 | 100% | None |
| 1.25 | 50.9 | 100% | None |
| 1.30 | 53.3 | 100% | None |
| 1.35 | 55.8 | 100% | None |
| 1.40 | 58.3 | 100% | None |
| 1.45 | 61.0 | 100% | None |
| 1.50 | 63.8 | 100% | None |
The following exposure parameters may be used to direct write into S1800 resist (soft baked at 115C for 1 minute) with the 2mm write head. For the optimum focus, please refer to the "AZ1500.txt" or "IP3500.txt" files for the optimum value to use.
| Resist Thk (µm) | Laser Power (mW) | Intensity | Filter |
|---|---|---|---|
| 0.5 | 24.1 | 70% | 12.5% & 25% |
| 0.55 | 26.4 | 70% | 12.5% & 25% |
| 0.6 | 28.7 | 70% | 12.5% & 25% |
| 0.65 | 31.0 | 70% | 12.5% & 25% |
| 0.7 | 33.2 | 70% | 12.5% & 25% |
| 0.75 | 35.5 | 70% | 12.5% & 25% |
| 0.8 | 37.7 | 70% | 12.5% & 25% |
| 0.85 | 40.0 | 70% | 12.5% & 25% |
| 0.9 | 42.2 | 70% | 12.5% & 25% |
| 0.95 | 44.4 | 70% | 12.5% & 25% |
| 1 | 46.6 | 70% | 12.5% & 25% |
| 1.05 | 48.8 | 70% | 12.5% & 25% |
| 1.1 | 51.0 | 70% | 12.5% & 25% |
| 1.15 | 53.1 | 70% | 12.5% & 25% |
| 1.2 | 55.3 | 70% | 12.5% & 25% |
| 1.25 | 57.4 | 70% | 12.5% & 25% |
| 1.3 | 59.6 | 70% | 12.5% & 25% |
| 1.35 | 61.7 | 70% | 12.5% & 25% |
| 1.4 | 63.8 | 70% | 12.5% & 25% |
| 1.45 | 65.9 | 70% | 12.5% & 25% |
| 1.5 | 68.0 | 70% | 12.5% & 25% |