Difference between revisions of "Raith EBPG5200+ E-Beam Lithography System"

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* [https://upenn.box.com/s/atymr3okn3xf20rb1kvk7ny79plojobm Graph of Spotsize vs. Current (Internal Use Only)]
 
* [https://upenn.box.com/s/atymr3okn3xf20rb1kvk7ny79plojobm Graph of Spotsize vs. Current (Internal Use Only)]
 
* [https://upenn.box.com/s/gzj28stdehm1kfmwjpcnio7vimr4m1w9 Alignment Mark Guidelines]
 
* [https://upenn.box.com/s/gzj28stdehm1kfmwjpcnio7vimr4m1w9 Alignment Mark Guidelines]
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===== Resist and Process Data =====
 
===== Resist and Process Data =====
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* [https://www.sciencedirect.com/science/article/pii/S0167931702004689 IPA:H<sub>2</sub>O for High Contrast Development of PMMA]
 
* [https://www.sciencedirect.com/science/article/pii/S0167931702004689 IPA:H<sub>2</sub>O for High Contrast Development of PMMA]
 
* [[ZEP_Process_Data | ZEP520A Contrast Curve]]
 
* [[ZEP_Process_Data | ZEP520A Contrast Curve]]
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* [[Media:Dsbarth_pmma_bubbling_maebl2023.pdf | Mitigating PMMA Bubbling]]

Revision as of 16:05, 24 July 2025


Raith EBPG5200+ EBL
EBL-03.jpg
Tool Name Raith EBPG5200+ EBL
Instrument Type Lithography
Staff Manager David Barth
Lab Location Bay 4
Tool Manufacturer Raith
Tool Model EBPG5200+
NEMO Designation EBL-03
Nearest Phone 8-9799
SOP Link SOP

Description

The Raith EBPG5200+ is an electron beam lithography tool capable of high resolution patterning at 100 kV. It has a 125 MHz pattern generator, a maximum current of 350 nA, and a 1 mm mainfield size. It has an automatic aperture changer, automatic and dynamic focus and stigmation, and automatic alignment. The EBPG can achieve linewidths <8nm with stitching and overlay accuracy better than 10nm.


Applications
  • Large scale, high speed patterning of positive and negative e-beam resists with features from <10 nm to micron/mm scale
Allowed Materials

Resources

SOP

Useful Information


Resist and Process Data