Difference between revisions of "Amorphous silicon deposition"
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| Line 4: | Line 4: | ||
== Materials == | == Materials == | ||
| − | * 250 nm SiO<sub>2</sub> on Si | + | * 250 nm SiO<sub>2</sub> on Si. |
== Equipment == | == Equipment == | ||
Latest revision as of 13:54, 14 October 2024
Goal
Determine the a-Si deposition rate on CVD-01
Materials
- 250 nm SiO2 on Si.