Difference between revisions of "RTA-01"
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The Rapid Thermal Annealer-01 anneals the sample up to 1200° C. The processes can be run under atmospheric pressure in Oxygen, Nitrogen, Forming Gas, and Argon environments. The tool can hold 4’’ wafers or smaller chips. Only MOS-compatible materials are allowed. Compound semiconductors and metals are not allowed. | The Rapid Thermal Annealer-01 anneals the sample up to 1200° C. The processes can be run under atmospheric pressure in Oxygen, Nitrogen, Forming Gas, and Argon environments. The tool can hold 4’’ wafers or smaller chips. Only MOS-compatible materials are allowed. Compound semiconductors and metals are not allowed. | ||
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== Resources == | == Resources == | ||
Revision as of 13:08, 9 September 2024
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| Tool Name | Rapid Thermal Annealer - 01 |
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| Instrument Type | Deposition |
| Staff Manager | Lucas Barreto |
| Lab Location | Bay 2 |
| Tool Manufacturer | AET |
| Tool Model | Thermal RX |
| NEMO Designation | RTA-01 |
| Lab Phone | 215-898-9736 |
| SOP Link | SOP |
Description
The Rapid Thermal Annealer-01 anneals the sample up to 1200° C. The processes can be run under atmospheric pressure in Oxygen, Nitrogen, Forming Gas, and Argon environments. The tool can hold 4’’ wafers or smaller chips. Only MOS-compatible materials are allowed. Compound semiconductors and metals are not allowed.