Difference between revisions of "Raith EBPG5200+ E-Beam Lithography System"
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* [https://avs.scitation.org/doi/full/10.1116/1.2366698 Cold Development for PMMA and ZEP] | * [https://avs.scitation.org/doi/full/10.1116/1.2366698 Cold Development for PMMA and ZEP] | ||
* [https://www.sciencedirect.com/science/article/pii/S0167931702004689 IPA:H<sub>2</sub>O for High Contrast Development of PMMA] | * [https://www.sciencedirect.com/science/article/pii/S0167931702004689 IPA:H<sub>2</sub>O for High Contrast Development of PMMA] | ||
+ | * [[ZEP_Process_Data | ZEP520A Contrast Curve]] |
Revision as of 13:23, 15 May 2024
Tool Name | Raith EBPG5200+ EBL |
---|---|
Instrument Type | Lithography |
Staff Manager | David Barth |
Lab Location | Bay 4 |
Tool Manufacturer | Raith |
Tool Model | EBPG5200+ |
NEMO Designation | EBL-03 |
Lab Phone | 8-9799 |
SOP Link | SOP |
Description
The Raith EBPG5200+ is an electron beam lithography tool capable of high resolution patterning at 100 kV. It has a 125 MHz pattern generator, a maximum current of 350 nA, and a 1 mm mainfield size. It has an automatic aperture changer, automatic and dynamic focus and stigmation, and automatic alignment. The EBPG can achieve linewidths <8nm with stitching and overlay accuracy better than 10nm.
Applications
- Large scale, high speed patterning of positive and negative e-beam resists with features from <10 nm to micron/mm scale
Allowed Materials
- Standard semiconductor materials
- Low vapor pressure metals
- Resists
Resources
SOP