Difference between revisions of "Raith EBPG5200+ E-Beam Lithography System"

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* [https://avs.scitation.org/doi/full/10.1116/1.2366698 Cold Development for PMMA and ZEP]
 
* [https://avs.scitation.org/doi/full/10.1116/1.2366698 Cold Development for PMMA and ZEP]
 
* [https://www.sciencedirect.com/science/article/pii/S0167931702004689 IPA:H<sub>2</sub>O for High Contrast Development of PMMA]
 
* [https://www.sciencedirect.com/science/article/pii/S0167931702004689 IPA:H<sub>2</sub>O for High Contrast Development of PMMA]
 +
* [[ZEP_Process_Data | ZEP520A Contrast Curve]]

Revision as of 13:23, 15 May 2024


Raith EBPG5200+ EBL
EBL-03.jpg
Tool Name Raith EBPG5200+ EBL
Instrument Type Lithography
Staff Manager David Barth
Lab Location Bay 4
Tool Manufacturer Raith
Tool Model EBPG5200+
NEMO Designation EBL-03
Lab Phone 8-9799
SOP Link SOP

Description

The Raith EBPG5200+ is an electron beam lithography tool capable of high resolution patterning at 100 kV. It has a 125 MHz pattern generator, a maximum current of 350 nA, and a 1 mm mainfield size. It has an automatic aperture changer, automatic and dynamic focus and stigmation, and automatic alignment. The EBPG can achieve linewidths <8nm with stitching and overlay accuracy better than 10nm.


Applications
  • Large scale, high speed patterning of positive and negative e-beam resists with features from <10 nm to micron/mm scale
Allowed Materials
  • Standard semiconductor materials
  • Low vapor pressure metals
  • Resists

Resources

SOP

Useful Information
Resist and Process Data