Difference between revisions of "Amorphous silicon deposition"
Jump to navigation
Jump to search
(Created page with "== Goal == The purpose of this document is to examine the etch properties of the Oxford 80 Plus RIE system and to find the etch rate of SiO2 and S1818 MicroChem positive resi...") |
|||
| (3 intermediate revisions by the same user not shown) | |||
| Line 1: | Line 1: | ||
== Goal == | == Goal == | ||
| + | Determine the a-Si deposition rate on CVD-01 | ||
| − | |||
== Materials == | == Materials == | ||
| − | * SiO<sub>2</sub> | + | * 250 nm SiO<sub>2</sub> on Si. |
== Equipment == | == Equipment == | ||
| Line 17: | Line 17: | ||
== Results == | == Results == | ||
| − | |||
| − | |||
Latest revision as of 14:54, 14 October 2024
Goal
Determine the a-Si deposition rate on CVD-01
Materials
- 250 nm SiO2 on Si.