Difference between revisions of "Lesker PVD75 DC/RF Sputterer"
Jump to navigation
Jump to search
| Line 60: | Line 60: | ||
===== Process Data ===== | ===== Process Data ===== | ||
* [https://upenn.box.com/s/lujbua3msga3313fntajkw3bcwh0d63w PVD-03 Recipes] | * [https://upenn.box.com/s/lujbua3msga3313fntajkw3bcwh0d63w PVD-03 Recipes] | ||
| + | * [https://www.angstromsciences.com/sputtering-yields Sputter Yield Chart] | ||
| + | :: Note: The sputter yield chart can be useful for estimating approximately what rate to expect from materials, but the rate given is highly dependent on tool configuration and is not directly relevant | ||
Revision as of 15:25, 3 June 2022
 |
|
| Tool Name | Lesker PVD75 DC/RF Sputterer |
|---|---|
| Instrument Type | Deposition |
| Staff Manager | David Barth |
| Lab Location | Bay 2 |
| Tool Manufacturer | Kurt J. Lesker |
| Tool Model | PVD75 |
| NEMO Designation | {{{NEMO_Designation}}} |
| Lab Phone | XXXXX |
| SOP Link | SOP |
Description
The Kurt J. Lesker PVD75 Sputter system is configured with 4 sputter guns in the following configuration:
Target 1: RF power, insulating/conductive target
Target 2: DC power, magnetic/non-magnetic conductive target
Target 3: DC power, non-magnetic conductive target
Target 4: DC power, magnetic/non-magnetic conductive target
The system is cryo-pumped process chamber with an automated interface, wafer platen rotation and heating up to 550°C, accepting sample sized from pieces to 150 mm diameter wafers.
Deposition Sources
- ITO
- Cr
- Ni
- Fe
- FeGa
- NiFe
- Ti
- Ni
- Cu
- Al
- SiO2
- TiO2
- Al2O3
- Ge
- Pt
- Ag (Warning! Ag target must be cooled down for more than 15 min after depositing Ag film.)
- Pd
- Si
- Mo
- Various others - please consult with staff
Resources
SOPs & Troubleshooting
Process Data
- Note: The sputter yield chart can be useful for estimating approximately what rate to expect from materials, but the rate given is highly dependent on tool configuration and is not directly relevant